High frequency impedance inverse in MTJ junction

L. C. Hsieh, Y. W. Huang, X. F. Han, Z. M. Zeng, W. C. Chien, T. Y. Peng, C. K. Lo, Y. D. Yao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The magnetoimpedance effect of magnetic tunnel junction (MTJ) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The MR loop with a ratio of 9.49% at 5 MHz switches to -11.51% at 7 MHz, respectively. This indicates the MR loop reverse shape and sign around 6 MHz. This inverse MR effect is explained by the impedance competition among Resistor-Inductor series circuit and Capacitor part.

Original languageEnglish
Pages (from-to)1903-1904
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar 1

Keywords

  • Impedance
  • Inverse
  • MTJ

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Hsieh, L. C., Huang, Y. W., Han, X. F., Zeng, Z. M., Chien, W. C., Peng, T. Y., Lo, C. K., & Yao, Y. D. (2007). High frequency impedance inverse in MTJ junction. Journal of Magnetism and Magnetic Materials, 310(2 SUPPL. PART 3), 1903-1904. https://doi.org/10.1016/j.jmmm.2006.10.1097