Abstract
We have demonstrated the 4.1-inch QVGA flexible AMOLED with bottom emission type, and the display was fabricated on 30um-thick colorless PI substrate. The a-Si:H TFT exhibited the field effect mobility of 0.43cm2/V-s, the Vth of 2.8V, the S.S. of 0.6V/decade, and the Ion/Ioff ratio is larger than 106.
| Original language | English |
|---|---|
| Pages | 589-591 |
| Number of pages | 3 |
| Publication status | Published - 2008 |
| Event | 15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 2008 Dec 3 → 2008 Dec 5 |
Other
| Other | 15th International Display Workshops, IDW '08 |
|---|---|
| Country/Territory | Japan |
| City | Niigata |
| Period | 2008/12/03 → 2008/12/05 |
ASJC Scopus subject areas
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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