Abstract
We have demonstrated the 4.1-inch QVGA flexible AMOLED with bottom emission type, and the display was fabricated on 30um-thick colorless PI substrate. The a-Si:H TFT exhibited the field effect mobility of 0.43cm2/V-s, the Vth of 2.8V, the S.S. of 0.6V/decade, and the Ion/Ioff ratio is larger than 106.
Original language | English |
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Pages | 589-591 |
Number of pages | 3 |
Publication status | Published - 2008 |
Event | 15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 2008 Dec 3 → 2008 Dec 5 |
Other
Other | 15th International Display Workshops, IDW '08 |
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Country/Territory | Japan |
City | Niigata |
Period | 2008/12/03 → 2008/12/05 |
ASJC Scopus subject areas
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials