High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

W. B. Chen, C. H. Cheng, C. W. Lin, P. C. Chen, Albert Chin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).

Original languageEnglish
Pages (from-to)64-67
Number of pages4
JournalSolid-State Electronics
Volume55
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1
Externally publishedYes

Fingerprint

barrier layers
Surface chemistry
Oxides
field effect transistors
Metals
Annealing
annealing
oxides
metals
Temperature
temperature

Keywords

  • EOT
  • Ge
  • High-κ dielectric
  • Mobility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness. / Chen, W. B.; Cheng, C. H.; Lin, C. W.; Chen, P. C.; Chin, Albert.

In: Solid-State Electronics, Vol. 55, No. 1, 01.01.2011, p. 64-67.

Research output: Contribution to journalArticle

Chen, W. B. ; Cheng, C. H. ; Lin, C. W. ; Chen, P. C. ; Chin, Albert. / High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness. In: Solid-State Electronics. 2011 ; Vol. 55, No. 1. pp. 64-67.
@article{687cb8aee4014bdbabb195dacfe35f6f,
title = "High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness",
abstract = "We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).",
keywords = "EOT, Ge, High-κ dielectric, Mobility",
author = "Chen, {W. B.} and Cheng, {C. H.} and Lin, {C. W.} and Chen, {P. C.} and Albert Chin",
year = "2011",
month = "1",
day = "1",
doi = "10.1016/j.sse.2010.09.006",
language = "English",
volume = "55",
pages = "64--67",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "1",

}

TY - JOUR

T1 - High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

AU - Chen, W. B.

AU - Cheng, C. H.

AU - Lin, C. W.

AU - Chen, P. C.

AU - Chin, Albert

PY - 2011/1/1

Y1 - 2011/1/1

N2 - We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).

AB - We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).

KW - EOT

KW - Ge

KW - High-κ dielectric

KW - Mobility

UR - http://www.scopus.com/inward/record.url?scp=78149285794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78149285794&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2010.09.006

DO - 10.1016/j.sse.2010.09.006

M3 - Article

AN - SCOPUS:78149285794

VL - 55

SP - 64

EP - 67

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 1

ER -