High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

W. B. Chen, C. H. Cheng, C. W. Lin, P. C. Chen, Albert Chin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We fabricated high performance gate-last TaN/La2O 3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).

Original languageEnglish
Pages (from-to)64-67
Number of pages4
JournalSolid-State Electronics
Volume55
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

Keywords

  • EOT
  • Ge
  • High-κ dielectric
  • Mobility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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