High-field electron transport in GaAs: a picosecond time-resolved Raman probe

Erik D. Grann; Shou J. Sheih; C. Chia; Kong T. Tsen; Otto F. Sankey; George N. Maracas; R. Droopad; A. Salvador; A. Botcharev; Hadis Morkoc

High-field electron transport in GaAs: a picosecond time-resolved Raman probe

Erik D. Grann^*
, Shou J. Sheih
, C. Chia
, Kong T. Tsen
, Otto F. Sankey
, George N. Maracas
, R. Droopad
, A. Salvador
, A. Botcharev
, Hadis Morkoc

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 10¹⁸ cm^-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as V_d = 2.5 × 10⁷ cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	David K. Ferry, Henry M. van Driel
Pages	190-197
Number of pages	8
Publication status	Published - 1994
Externally published	Yes
Event	Ultrafast Phenomena in Semiconductors - Los Angeles, CA, USA Duration: 1994 Jan 27 → 1994 Jan 28

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2142
ISSN (Print)	0277-786X

Other

Other	Ultrafast Phenomena in Semiconductors
City	Los Angeles, CA, USA
Period	1994/01/27 → 1994/01/28

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Maracas, G. N., Droopad, R., Salvador, A., Botcharev, A., & Morkoc, H. (1994). High-field electron transport in GaAs: a picosecond time-resolved Raman probe. In D. K. Ferry, & H. M. van Driel (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 190-197). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2142).

High-field electron transport in GaAs: a picosecond time-resolved Raman probe. / Grann, Erik D.; Sheih, Shou J.; Chia, C. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / David K. Ferry; Henry M. van Driel. 1994. p. 190-197 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2142).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grann, ED, Sheih, SJ, Chia, C, Tsen, KT, Sankey, OF, Maracas, GN, Droopad, R, Salvador, A, Botcharev, A & Morkoc, H 1994, High-field electron transport in GaAs: a picosecond time-resolved Raman probe. in DK Ferry & HM van Driel (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2142, pp. 190-197, Ultrafast Phenomena in Semiconductors, Los Angeles, CA, USA, 1994/01/27.

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title = "High-field electron transport in GaAs: a picosecond time-resolved Raman probe",

abstract = "Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.",

author = "Grann, \{Erik D.\} and Sheih, \{Shou J.\} and C. Chia and Tsen, \{Kong T.\} and Sankey, \{Otto F.\} and Maracas, \{George N.\} and R. Droopad and A. Salvador and A. Botcharev and Hadis Morkoc",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Ultrafast Phenomena in Semiconductors ; Conference date: 27-01-1994 Through 28-01-1994",

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AU - Grann, Erik D.

AU - Sheih, Shou J.

AU - Chia, C.

AU - Tsen, Kong T.

AU - Sankey, Otto F.

AU - Maracas, George N.

AU - Droopad, R.

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoc, Hadis

PY - 1994

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N2 - Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

AB - Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

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M3 - Conference contribution

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SN - 9780819414373

T3 - Proceedings of SPIE - The International Society for Optical Engineering

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BT - Proceedings of SPIE - The International Society for Optical Engineering

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A2 - van Driel, Henry M.

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ER -

High-field electron transport in GaAs: a picosecond time-resolved Raman probe

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