High-field electron transport in GaAs: a picosecond time-resolved Raman probe

Erik D. Grann, Shou J. Sheih, C. Chia, Kong T. Tsen, Otto F. Sankey, George N. Maracas, R. Droopad, A. Salvador, A. Botcharev, Hadis Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T ≈ 80 K. For an injected carrier density of n ≈ 2.2 × 1018 cm-3 and electric field intensity E = 25 KV/cm, the drift velocity of electrons as high as Vd = 2.5 × 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDavid K. Ferry, Henry M. van Driel
Pages190-197
Number of pages8
Publication statusPublished - 1994 Dec 1
EventUltrafast Phenomena in Semiconductors - Los Angeles, CA, USA
Duration: 1994 Jan 271994 Jan 28

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2142
ISSN (Print)0277-786X

Other

OtherUltrafast Phenomena in Semiconductors
CityLos Angeles, CA, USA
Period94/1/2794/1/28

Fingerprint

Electron Transport
Raman Spectroscopy
Raman
Gallium Arsenide
Nanostructures
Raman spectroscopy
Semiconductors
Electric Field
Probe
Electric fields
Semiconductor materials
electric fields
probes
Overshoot
Ballistics
ballistics
Non-equilibrium
Carrier concentration
Time Scales
electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Maracas, G. N., ... Morkoc, H. (1994). High-field electron transport in GaAs: a picosecond time-resolved Raman probe. In D. K. Ferry, & H. M. van Driel (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 190-197). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2142).

High-field electron transport in GaAs : a picosecond time-resolved Raman probe. / Grann, Erik D.; Sheih, Shou J.; Chia, C.; Tsen, Kong T.; Sankey, Otto F.; Maracas, George N.; Droopad, R.; Salvador, A.; Botcharev, A.; Morkoc, Hadis.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / David K. Ferry; Henry M. van Driel. 1994. p. 190-197 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2142).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Grann, ED, Sheih, SJ, Chia, C, Tsen, KT, Sankey, OF, Maracas, GN, Droopad, R, Salvador, A, Botcharev, A & Morkoc, H 1994, High-field electron transport in GaAs: a picosecond time-resolved Raman probe. in DK Ferry & HM van Driel (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2142, pp. 190-197, Ultrafast Phenomena in Semiconductors, Los Angeles, CA, USA, 94/1/27.
Grann ED, Sheih SJ, Chia C, Tsen KT, Sankey OF, Maracas GN et al. High-field electron transport in GaAs: a picosecond time-resolved Raman probe. In Ferry DK, van Driel HM, editors, Proceedings of SPIE - The International Society for Optical Engineering. 1994. p. 190-197. (Proceedings of SPIE - The International Society for Optical Engineering).
Grann, Erik D. ; Sheih, Shou J. ; Chia, C. ; Tsen, Kong T. ; Sankey, Otto F. ; Maracas, George N. ; Droopad, R. ; Salvador, A. ; Botcharev, A. ; Morkoc, Hadis. / High-field electron transport in GaAs : a picosecond time-resolved Raman probe. Proceedings of SPIE - The International Society for Optical Engineering. editor / David K. Ferry ; Henry M. van Driel. 1994. pp. 190-197 (Proceedings of SPIE - The International Society for Optical Engineering).
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