High etching rate of GaN films by KrF excimer laser

Chen Fu Chu; C. K. Lee; C. C. Yu; Y. K. Wang; J. Y. Tasi; C. R. Yang; S. C. Wang

doi:10.1016/S0921-5107(00)00696-6

High etching rate of GaN films by KrF excimer laser

Chen Fu Chu^*, C. K. Lee, C. C. Yu, Y. K. Wang, J. Y. Tasi, C. R. Yang, S. C. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A study of laser processing of gallium nitride (GaN) material is reported. A pulsed KrF excimer laser at 248 nm with 20-nsec pulse width and 1 Hz repetition rate is used to etch the GaN film. We establish the material etching parameters under different environmental conditions. By changing the pulsed energy at constant pulse numbers, ablation of GaN surface was observed at threshold laser fluence about 0.3 J cm^-2. Laser etching increase with reducing environment pressure. At 1.0 J cm^-2 laser fluence, the etching rate is about 35 nm per pulse at atmosphere pressure and increases to 60 nm per pulse at low pressure. The etched depth also increases with increasing laser fluence. The surface morphology of the etched surface was also investigated.

Original language	English
Pages (from-to)	42-44
Number of pages	3
Journal	Materials Science and Engineering: B
Volume	82
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00696-6
Publication status	Published - 2001 May 22
Externally published	Yes

Keywords

Atmosphere pressure
Environmental conditions
GaN
KrF excimer laser
Low pressure

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(00)00696-6

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title = "High etching rate of GaN films by KrF excimer laser",

abstract = "A study of laser processing of gallium nitride (GaN) material is reported. A pulsed KrF excimer laser at 248 nm with 20-nsec pulse width and 1 Hz repetition rate is used to etch the GaN film. We establish the material etching parameters under different environmental conditions. By changing the pulsed energy at constant pulse numbers, ablation of GaN surface was observed at threshold laser fluence about 0.3 J cm-2. Laser etching increase with reducing environment pressure. At 1.0 J cm-2 laser fluence, the etching rate is about 35 nm per pulse at atmosphere pressure and increases to 60 nm per pulse at low pressure. The etched depth also increases with increasing laser fluence. The surface morphology of the etched surface was also investigated.",

keywords = "Atmosphere pressure, Environmental conditions, GaN, KrF excimer laser, Low pressure",

author = "Chu, {Chen Fu} and Lee, {C. K.} and Yu, {C. C.} and Wang, {Y. K.} and Tasi, {J. Y.} and Yang, {C. R.} and Wang, {S. C.}",

note = "Funding Information: This work was supported by National Science Council of Republic of China in Taiwan no. NSC 88-2215-E-009-077. The authors would like to thank S.D. Liao of National Tsing Hua University for chamber made support. In addition, they would also like to thank Professor L.H. Peng of National Taiwan University for valuable suggestions.",

year = "2001",

month = may,

day = "22",

doi = "10.1016/S0921-5107(00)00696-6",

language = "English",

volume = "82",

pages = "42--44",

journal = "Materials Science and Engineering: B",

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TY - JOUR

T1 - High etching rate of GaN films by KrF excimer laser

AU - Chu, Chen Fu

AU - Lee, C. K.

AU - Yu, C. C.

AU - Wang, Y. K.

AU - Tasi, J. Y.

AU - Yang, C. R.

AU - Wang, S. C.

N1 - Funding Information: This work was supported by National Science Council of Republic of China in Taiwan no. NSC 88-2215-E-009-077. The authors would like to thank S.D. Liao of National Tsing Hua University for chamber made support. In addition, they would also like to thank Professor L.H. Peng of National Taiwan University for valuable suggestions.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - A study of laser processing of gallium nitride (GaN) material is reported. A pulsed KrF excimer laser at 248 nm with 20-nsec pulse width and 1 Hz repetition rate is used to etch the GaN film. We establish the material etching parameters under different environmental conditions. By changing the pulsed energy at constant pulse numbers, ablation of GaN surface was observed at threshold laser fluence about 0.3 J cm-2. Laser etching increase with reducing environment pressure. At 1.0 J cm-2 laser fluence, the etching rate is about 35 nm per pulse at atmosphere pressure and increases to 60 nm per pulse at low pressure. The etched depth also increases with increasing laser fluence. The surface morphology of the etched surface was also investigated.

AB - A study of laser processing of gallium nitride (GaN) material is reported. A pulsed KrF excimer laser at 248 nm with 20-nsec pulse width and 1 Hz repetition rate is used to etch the GaN film. We establish the material etching parameters under different environmental conditions. By changing the pulsed energy at constant pulse numbers, ablation of GaN surface was observed at threshold laser fluence about 0.3 J cm-2. Laser etching increase with reducing environment pressure. At 1.0 J cm-2 laser fluence, the etching rate is about 35 nm per pulse at atmosphere pressure and increases to 60 nm per pulse at low pressure. The etched depth also increases with increasing laser fluence. The surface morphology of the etched surface was also investigated.

KW - Atmosphere pressure

KW - Environmental conditions

KW - GaN

KW - KrF excimer laser

KW - Low pressure

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DO - 10.1016/S0921-5107(00)00696-6

M3 - Article

AN - SCOPUS:0035933083

SN - 0921-5107

VL - 82

SP - 42

EP - 44

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

High etching rate of GaN films by KrF excimer laser

Abstract

Keywords

ASJC Scopus subject areas

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