High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

Chyuan Haur Kao; Kou Chen Liu; Min Hung Lee; Shih Nan Cheng; Ching Hua Huang; Wen Kai Lin

doi:10.1016/j.tsf.2011.10.173

High dielectric constant terbium oxide (Tb ₂O ₃) dielectric deposited on strained-Si:C

Chyuan Haur Kao^*
, Kou Chen Liu
, Min Hung Lee
, Shih Nan Cheng
, Ching Hua Huang
, Wen Kai Lin

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

High-k Tb ₂O ₃ films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb ₂O ₃ dielectrics properly annealed at 800°C form well-crystallized Tb ₂O ₃ structures with few defects.

Original language	English
Pages (from-to)	3402-3405
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2011.10.173
Publication status	Published - 2012 Feb 1

Keywords

Rapid thermal annealing
Strained-Si:C
Terbium oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2011.10.173

Cite this

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title = "High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C",

abstract = "High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.",

keywords = "Rapid thermal annealing, Strained-Si:C, Terbium oxide",

author = "Kao, \{Chyuan Haur\} and Liu, \{Kou Chen\} and Lee, \{Min Hung\} and Cheng, \{Shih Nan\} and Huang, \{Ching Hua\} and Lin, \{Wen Kai\}",

note = "Funding Information: This work was supported by the National Science Council under the contract of NSC 99-2221-E-182-060 .",

year = "2012",

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doi = "10.1016/j.tsf.2011.10.173",

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T1 - High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

AU - Kao, Chyuan Haur

AU - Liu, Kou Chen

AU - Lee, Min Hung

AU - Cheng, Shih Nan

AU - Huang, Ching Hua

AU - Lin, Wen Kai

N1 - Funding Information: This work was supported by the National Science Council under the contract of NSC 99-2221-E-182-060 .

PY - 2012/2/1

Y1 - 2012/2/1

N2 - High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.

AB - High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.

KW - Rapid thermal annealing

KW - Strained-Si:C

KW - Terbium oxide

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DO - 10.1016/j.tsf.2011.10.173

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AN - SCOPUS:84857044888

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SP - 3402

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JO - Thin Solid Films

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