High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

Chyuan Haur Kao*, Kou Chen Liu, Min Hung Lee, Shih Nan Cheng, Ching Hua Huang, Wen Kai Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.

Original languageEnglish
Pages (from-to)3402-3405
Number of pages4
JournalThin Solid Films
Issue number8
Publication statusPublished - 2012 Feb 1


  • Rapid thermal annealing
  • Strained-Si:C
  • Terbium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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