High dielectric constant terbium oxide (Tb 2O 3) dielectric deposited on strained-Si:C

Chyuan Haur Kao, Kou Chen Liu, Min Hung Lee, Shih Nan Cheng, Ching Hua Huang, Wen Kai Lin

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    High-k Tb 2O 3 films deposited on strained-Si:C and treated with different post-rapid thermal annealing temperatures were formed as alternative gate dielectrics in metal oxide semiconductor devices. The dielectrics were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. It was found that Tb 2O 3 dielectrics properly annealed at 800°C form well-crystallized Tb 2O 3 structures with few defects.

    Original languageEnglish
    Pages (from-to)3402-3405
    Number of pages4
    JournalThin Solid Films
    Volume520
    Issue number8
    DOIs
    Publication statusPublished - 2012 Feb 1

    Keywords

    • Rapid thermal annealing
    • Strained-Si:C
    • Terbium oxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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