@inproceedings{d19a72246dcf4a3aa33dd072c182331f,
title = "High Dielectric Constant of HfO2 Technology for Memory Applications",
abstract = "HfO2 with ferroelectricity has been widely investigated for memory and logic applications, including doped by Zr, Si, La, …etc. The superlamination (SL) technique exhibits higher capacitance and dielectric constant as compared to solid-solution (SS). The maximum dielectric constant achieves as high as 46 for HZZ at [Zr] = 66\% with morphotropic phase boundary (MPB) effect. Ferroelectric-based memory of ferroelectric capacitive memory (FCM) has gained significant attention due to the charge transfer concept, which is adopted with the SL technique. The SL technique exhibits higher capacitance and applicable remnant polarization (Pr) benefits for FCM application to demonstrate a CHCS/CLCS ratio of 245x. The feasible concept of coupling the MPB SL Hf1-xZrxO2 is practicable into emerging memory/synapse.",
keywords = "ferroelectric, ferroelectric capacitive memory (FCM), morphotropic phase boundary (MPB)",
author = "Lee, \{Min Hung\} and Luo, \{Zhao Feng\} and Liao, \{Chun Yu\} and Hsiang, \{Kuo Yu\} and Lee, \{Jia Yang\} and Chang, \{Fu Shen\} and Chang, \{Yii Tay\} and Liu, \{Cheng Hong\} and Cheng, \{Che Chi\}",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",
year = "2025",
doi = "10.1109/EDTM61175.2025.11041123",
language = "English",
series = "9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "9th IEEE Electron Devices Technology and Manufacturing Conference",
}