High density and low leakage current in TiO2 MIM capacitors processed at 300°C

C. H. Cheng; S. H. Lin; K. Y. Jhou; W. J. Chen; C. P. Chou; F. S. Yeh; Jim Hu; M. Hwang; T. Arikado; Sean P. McAlister; Albert Chin

doi:10.1109/LED.2008.2000833

High density and low leakage current in TiO₂ MIM capacitors processed at 300°C

C. H. Cheng^*, S. H. Lin, K. Y. Jhou, W. J. Chen, C. P. Chou, F. S. Yeh, Jim Hu, M. Hwang, T. Arikado, Sean P. McAlister, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

We report Ir/TiO₂/TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm² and a leakage current of 3 × 10^-8 (25 °C) or 6 × 10-7 (125 °C) A/cm² at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO₂, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

Original language	English
Pages (from-to)	845-847
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	8
DOIs	https://doi.org/10.1109/LED.2008.2000833
Publication status	Published - 2008 Aug
Externally published	Yes

Keywords

High κ
Ir
Metal-insulator-metal (MIM)
TiO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2008.2000833

Cite this

@article{7df9024485b34d2589a757e2cdaa492d,

title = "High density and low leakage current in TiO2 MIM capacitors processed at 300°C",

abstract = "We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm2 and a leakage current of 3 × 10-8 (25 °C) or 6 × 10-7 (125 °C) A/cm2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.",

keywords = "High κ, Ir, Metal-insulator-metal (MIM), TiO",

author = "Cheng, {C. H.} and Lin, {S. H.} and Jhou, {K. Y.} and Chen, {W. J.} and Chou, {C. P.} and Yeh, {F. S.} and Jim Hu and M. Hwang and T. Arikado and McAlister, {Sean P.} and Albert Chin",

note = "Funding Information: The National Chiao Tung University (NCTU) team would like to thank the support from Tokyo Electron Ltd. and NSC (95-2221-E-009-298-MY3).",

year = "2008",

month = aug,

doi = "10.1109/LED.2008.2000833",

language = "English",

volume = "29",

pages = "845--847",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - High density and low leakage current in TiO2 MIM capacitors processed at 300°C

AU - Cheng, C. H.

AU - Lin, S. H.

AU - Jhou, K. Y.

AU - Chen, W. J.

AU - Chou, C. P.

AU - Yeh, F. S.

AU - Hu, Jim

AU - Hwang, M.

AU - Arikado, T.

AU - McAlister, Sean P.

AU - Chin, Albert

N1 - Funding Information: The National Chiao Tung University (NCTU) team would like to thank the support from Tokyo Electron Ltd. and NSC (95-2221-E-009-298-MY3).

PY - 2008/8

Y1 - 2008/8

N2 - We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm2 and a leakage current of 3 × 10-8 (25 °C) or 6 × 10-7 (125 °C) A/cm2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

AB - We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm2 and a leakage current of 3 × 10-8 (25 °C) or 6 × 10-7 (125 °C) A/cm2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

KW - High κ

KW - Ir

KW - Metal-insulator-metal (MIM)

KW - TiO

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U2 - 10.1109/LED.2008.2000833

DO - 10.1109/LED.2008.2000833

M3 - Article

AN - SCOPUS:48749083398

SN - 0741-3106

VL - 29

SP - 845

EP - 847

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -