High density and low leakage current in TiO2 MIM capacitors processed at 300°C

C. H. Cheng, S. H. Lin, K. Y. Jhou, W. J. Chen, C. P. Chou, F. S. Yeh, Jim Hu, M. Hwang, T. Arikado, Sean P. McAlister, Albert Chin

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm2 and a leakage current of 3 × 10-8 (25 °C) or 6 × 10-7 (125 °C) A/cm2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

Original languageEnglish
Pages (from-to)845-847
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number8
DOIs
Publication statusPublished - 2008 Aug 1

Keywords

  • High κ
  • Ir
  • Metal-insulator-metal (MIM)
  • TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Cheng, C. H., Lin, S. H., Jhou, K. Y., Chen, W. J., Chou, C. P., Yeh, F. S., Hu, J., Hwang, M., Arikado, T., McAlister, S. P., & Chin, A. (2008). High density and low leakage current in TiO2 MIM capacitors processed at 300°C. IEEE Electron Device Letters, 29(8), 845-847. https://doi.org/10.1109/LED.2008.2000833