High density and low leakage current in TiO2 MIM capacitors processed at 300°C

C. H. Cheng, S. H. Lin, K. Y. Jhou, W. J. Chen, C. P. Chou, F. S. Yeh, Jim Hu, M. Hwang, T. Arikado, Sean P. McAlister, Albert Chin

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Abstract

We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm2 and a leakage current of 3 × 10-8 (25 °C) or 6 × 10-7 (125 °C) A/cm2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

Original languageEnglish
Pages (from-to)845-847
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number8
DOIs
Publication statusPublished - 2008 Aug 1

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Keywords

  • High κ
  • Ir
  • Metal-insulator-metal (MIM)
  • TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Cheng, C. H., Lin, S. H., Jhou, K. Y., Chen, W. J., Chou, C. P., Yeh, F. S., Hu, J., Hwang, M., Arikado, T., McAlister, S. P., & Chin, A. (2008). High density and low leakage current in TiO2 MIM capacitors processed at 300°C. IEEE Electron Device Letters, 29(8), 845-847. https://doi.org/10.1109/LED.2008.2000833