We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm2 and a leakage current of 3 × 10-8 (25 °C) or 6 × 10-7 (125 °C) A/cm2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.
- High κ
- Metal-insulator-metal (MIM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering