High brightness GaN-based light-emitting diodes

Ya Ju Lee*, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

Original languageEnglish
Pages (from-to)118-125
Number of pages8
JournalIEEE/OSA Journal of Display Technology
Issue number2
Publication statusPublished - 2007 Jun
Externally publishedYes


  • Extraction quantum efficiency
  • GaN
  • Internal quantum efficiency
  • Light-emitting diodes (LEDs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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