High brightness GaN-based light-emitting diodes

Ya Ju Lee, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

Original languageEnglish
Pages (from-to)118-125
Number of pages8
JournalIEEE/OSA Journal of Display Technology
Volume3
Issue number2
DOIs
Publication statusPublished - 2007 Jun 1

Fingerprint

Light emitting diodes
Luminance
brightness
light emitting diodes
Quantum efficiency
quantum efficiency
Wet etching
Aluminum Oxide
Sapphire
Light scattering
sapphire
light scattering
etching
Substrates

Keywords

  • Extraction quantum efficiency
  • GaN
  • Internal quantum efficiency
  • Light-emitting diodes (LEDs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

High brightness GaN-based light-emitting diodes. / Lee, Ya Ju; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.

In: IEEE/OSA Journal of Display Technology, Vol. 3, No. 2, 01.06.2007, p. 118-125.

Research output: Contribution to journalArticle

Lee, Ya Ju ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung. / High brightness GaN-based light-emitting diodes. In: IEEE/OSA Journal of Display Technology. 2007 ; Vol. 3, No. 2. pp. 118-125.
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