High brightness GaN-based light-emitting diodes

Ya Ju Lee, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

Original languageEnglish
Pages (from-to)118-125
Number of pages8
JournalIEEE/OSA Journal of Display Technology
Volume3
Issue number2
DOIs
Publication statusPublished - 2007 Jun

Keywords

  • Extraction quantum efficiency
  • GaN
  • Internal quantum efficiency
  • Light-emitting diodes (LEDs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High brightness GaN-based light-emitting diodes'. Together they form a unique fingerprint.

Cite this