High brightness AlGaInP-based light emitting diodes by adopting the stripe-patterned omni-directional reflector

Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, M. J. Liou, C. W. Chang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    An n-side-up AlGaInP-based LED operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) was fabricated by adopting the adhesive-layer bonding scheme. It is demonstrated that the periodic and geometrical shape of the stripe-patterned array improves the light extraction efficiency by increasing the extraction of guided light. Compared to the conventional ODR LED, the stripe-patterned ODR LED significantly enhanced the output power and with only a slightly higher forward voltage. This improvement was analysed by the scanning near-field optical microscope (SNOM) and the optimized dimension of stripe patterns was also calculated on the basis of a Monte Carlo ray tracing simulation. According to the above analysis, the increase of light extraction could not only be attributed to the geometrical shape of the stripe patterns that redirect the trapped light towards the top-escaping cone of the LED surface but also to the repetitive stripe-patterned array of diffracting elements that effectively diffract the guided light outside the LED surface. Moreover, the optimized dimension of the stripe pattern is 3 νm wide, 2 νm deep and spaced 3 νm apart, which coincides with experimental results.

    Original languageEnglish
    Pages (from-to)184-189
    Number of pages6
    JournalSemiconductor Science and Technology
    Volume21
    Issue number2
    DOIs
    Publication statusPublished - 2006 Feb 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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