High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Ya Ju Lee; Yung Chi Yao; Chun Ying Huang; Tai Yuan Lin; Li Lien Cheng; Ching Yun Liu; Mei Tan Wang; Jung Min Hwang

doi:10.1186/1556-276X-9-433

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Ya Ju Lee^*
, Yung Chi Yao
, Chun Ying Huang
, Tai Yuan Lin
, Li Lien Cheng
, Ching Yun Liu
, Mei Tan Wang
, Jung Min Hwang

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

Original language	English
Article number	433
Pages (from-to)	1-9
Number of pages	9
Journal	Nanoscale Research Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-9-433
Publication status	Published - 2014

Keywords

2-DEG
AlGaN/GaN HEMT
Breakdown voltage

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1186/1556-276X-9-433

Cite this

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title = "High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers",

abstract = "In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.",

keywords = "2-DEG, AlGaN/GaN HEMT, Breakdown voltage",

author = "Lee, \{Ya Ju\} and Yao, \{Yung Chi\} and Huang, \{Chun Ying\} and Lin, \{Tai Yuan\} and Cheng, \{Li Lien\} and Liu, \{Ching Yun\} and Wang, \{Mei Tan\} and Hwang, \{Jung Min\}",

note = "Funding Information: The authors gratefully acknowledge financial support from the National Science Council of the Republic of China (ROC) in Taiwan (contract no. NSC–100–2112–M–003–006–MY3), from the Bureau of Energy, Ministry of Economic Affairs in Taiwan, and from the Ministry of Science and Technology in Taiwan (contract no. MOST 103–2112–M–003–008–MY3).",

year = "2014",

doi = "10.1186/1556-276X-9-433",

language = "English",

volume = "9",

pages = "1--9",

journal = "Nanoscale Research Letters",

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publisher = "Springer New York",

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TY - JOUR

T1 - High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

AU - Lee, Ya Ju

AU - Yao, Yung Chi

AU - Huang, Chun Ying

AU - Lin, Tai Yuan

AU - Cheng, Li Lien

AU - Liu, Ching Yun

AU - Wang, Mei Tan

AU - Hwang, Jung Min

N1 - Funding Information: The authors gratefully acknowledge financial support from the National Science Council of the Republic of China (ROC) in Taiwan (contract no. NSC–100–2112–M–003–006–MY3), from the Bureau of Energy, Ministry of Economic Affairs in Taiwan, and from the Ministry of Science and Technology in Taiwan (contract no. MOST 103–2112–M–003–008–MY3).

PY - 2014

Y1 - 2014

N2 - In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

AB - In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

KW - 2-DEG

KW - AlGaN/GaN HEMT

KW - Breakdown voltage

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UR - https://www.scopus.com/pages/publications/84940346322#tab=citedBy

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DO - 10.1186/1556-276X-9-433

M3 - Article

AN - SCOPUS:84940346322

SN - 1931-7573

VL - 9

SP - 1

EP - 9

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 433

ER -

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Abstract

Keywords

ASJC Scopus subject areas

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