High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Ya Ju Lee, Yung Chi Yao, Chun Ying Huang, Tai Yuan Lin, Li Lien Cheng, Ching Yun Liu, Mei Tan Wang, Jung Min Hwang

    Research output: Contribution to journalArticlepeer-review

    21 Citations (Scopus)

    Abstract

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

    Original languageEnglish
    Article number433
    Pages (from-to)1-9
    Number of pages9
    JournalNanoscale Research Letters
    Volume9
    Issue number1
    DOIs
    Publication statusPublished - 2014 Jan 1

    Keywords

    • 2-DEG
    • AlGaN/GaN HEMT
    • Breakdown voltage

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

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