High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Ya Ju Lee, Yung Chi Yao, Chun Ying Huang, Tai Yuan Lin, Li Lien Cheng, Ching Yun Liu, Mei Tan Wang, Jung Min Hwang

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18 Citations (Scopus)

Abstract

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

Original languageEnglish
Article number433
Pages (from-to)1-9
Number of pages9
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

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Keywords

  • 2-DEG
  • AlGaN/GaN HEMT
  • Breakdown voltage

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lee, Y. J., Yao, Y. C., Huang, C. Y., Lin, T. Y., Cheng, L. L., Liu, C. Y., Wang, M. T., & Hwang, J. M. (2014). High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers. Nanoscale Research Letters, 9(1), 1-9. [433]. https://doi.org/10.1186/1556-276X-9-433