High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Ya Ju Lee, Yung Chi Yao, Chun Ying Huang, Tai Yuan Lin, Li Lien Cheng, Ching Yun Liu, Mei Tan Wang, Jung Min Hwang

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

Original languageEnglish
Article number433
Pages (from-to)1-9
Number of pages9
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Electric breakdown
electrical faults
Semiconductor quantum wells
quantum wells
Electrons
electrons
spilling
Two dimensional electron gas
Electron mobility
electron mobility
electron gas
breakdown
retarding
aluminum gallium nitride
augmentation
Chemical analysis

Keywords

  • 2-DEG
  • AlGaN/GaN HEMT
  • Breakdown voltage

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers. / Lee, Ya Ju; Yao, Yung Chi; Huang, Chun Ying; Lin, Tai Yuan; Cheng, Li Lien; Liu, Ching Yun; Wang, Mei Tan; Hwang, Jung Min.

In: Nanoscale Research Letters, Vol. 9, No. 1, 433, 01.01.2014, p. 1-9.

Research output: Contribution to journalArticle

Lee, Ya Ju ; Yao, Yung Chi ; Huang, Chun Ying ; Lin, Tai Yuan ; Cheng, Li Lien ; Liu, Ching Yun ; Wang, Mei Tan ; Hwang, Jung Min. / High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers. In: Nanoscale Research Letters. 2014 ; Vol. 9, No. 1. pp. 1-9.
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AU - Cheng, Li Lien

AU - Liu, Ching Yun

AU - Wang, Mei Tan

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