High- κ TiCeO MIM capacitors with a dual-plasma interface treatment

C. H. Cheng; H. H. Hsu; I. J. Hsieh; C. K. Deng; Albert Chin; F. S. Yeh

doi:10.1149/1.3294495

High- κ TiCeO MIM capacitors with a dual-plasma interface treatment

C. H. Cheng, H. H. Hsu, I. J. Hsieh, C. K. Deng, Albert Chin, F. S. Yeh

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, we successfully fabricated high- κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400°C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of ∼17 fF/μ m² at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-α) of 866 ppm/ V² at a 10.3 fF/μ m² density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher- κ TiCeO dielectrics, and a high work-function Ir metal.

Original language	English
Pages (from-to)	H112-H115
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1149/1.3294495
Publication status	Published - 2010
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "High- κ TiCeO MIM capacitors with a dual-plasma interface treatment",

abstract = "In this study, we successfully fabricated high- κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400°C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of ∼17 fF/μ m2 at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-α) of 866 ppm/ V2 at a 10.3 fF/μ m2 density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher- κ TiCeO dielectrics, and a high work-function Ir metal.",

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TY - JOUR

T1 - High- κ TiCeO MIM capacitors with a dual-plasma interface treatment

AU - Cheng, C. H.

AU - Hsu, H. H.

AU - Hsieh, I. J.

AU - Deng, C. K.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010

Y1 - 2010

N2 - In this study, we successfully fabricated high- κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400°C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of ∼17 fF/μ m2 at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-α) of 866 ppm/ V2 at a 10.3 fF/μ m2 density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher- κ TiCeO dielectrics, and a high work-function Ir metal.

AB - In this study, we successfully fabricated high- κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400°C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of ∼17 fF/μ m2 at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-α) of 866 ppm/ V2 at a 10.3 fF/μ m2 density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher- κ TiCeO dielectrics, and a high work-function Ir metal.

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High- κ TiCeO MIM capacitors with a dual-plasma interface treatment

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