High- κ TiCeO MIM capacitors with a dual-plasma interface treatment

C. H. Cheng, H. H. Hsu, I. J. Hsieh, C. K. Deng, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we successfully fabricated high- κ Ir/TiCeO/TaN metal-insulator-metal (MIM) capacitors using a dual-plasma treatment on a bottom TaN electrode. The plasma treatment suppressed the growth of the bottom interfacial layer to largely improve capacitor performance at a 400°C thermal budget. The Ir/TiCeO/TaN MIM capacitor achieved a high capacitance density of ∼17 fF/μ m2 at a 22 nm thickness and a low quadratic coefficient of capacitance (VCC-α) of 866 ppm/ V2 at a 10.3 fF/μ m2 density. The good performance is due to the combined effects of a dual-plasma interface treatment, higher- κ TiCeO dielectrics, and a high work-function Ir metal.

Original languageEnglish
Pages (from-to)H112-H115
JournalElectrochemical and Solid-State Letters
Volume13
Issue number4
DOIs
Publication statusPublished - 2010 Feb 22

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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