Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation

S. Dhara; A. Datta; C. T. Wu; Z. H. Lan; K. H. Chen; Y. L. Wang; C. W. Hsu; C. H. Shen; L. C. Chen; C. C. Chen

doi:10.1063/1.1760593

Hexagonal-to-cubic phase transformation in GaN nanowires by Ga⁺ implantation

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, C. W. Hsu, C. H. Shen, L. C. Chen^*, C. C. Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Hexagonal-to-cubic phase transformation was carried out in gallium nitride nanowires using gallium ion implantation. The phase transformation was confirmed by performing optical photoluminescence, cathodoluminescence and high-resolution transmission electron microscopy (HRTEM). The deposition of Gallium from the implanted source reduced the surface energy and stablized the cubic phase. It was found that the fluctuations in the short-range order induced by dynamic annealing with the irradiation process stabilize the cubic phase and cause the phase transformation.

Original language	English
Pages (from-to)	5473-5475
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	26
DOIs	https://doi.org/10.1063/1.1760593
Publication status	Published - 2004 Jun 28

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation",

abstract = "Hexagonal-to-cubic phase transformation was carried out in gallium nitride nanowires using gallium ion implantation. The phase transformation was confirmed by performing optical photoluminescence, cathodoluminescence and high-resolution transmission electron microscopy (HRTEM). The deposition of Gallium from the implanted source reduced the surface energy and stablized the cubic phase. It was found that the fluctuations in the short-range order induced by dynamic annealing with the irradiation process stabilize the cubic phase and cause the phase transformation.",

author = "S. Dhara and A. Datta and Wu, {C. T.} and Lan, {Z. H.} and Chen, {K. H.} and Wang, {Y. L.} and Hsu, {C. W.} and Shen, {C. H.} and Chen, {L. C.} and Chen, {C. C.}",

year = "2004",

month = jun,

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doi = "10.1063/1.1760593",

language = "English",

volume = "84",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation

AU - Dhara, S.

AU - Datta, A.

AU - Wu, C. T.

AU - Lan, Z. H.

AU - Chen, K. H.

AU - Wang, Y. L.

AU - Hsu, C. W.

AU - Shen, C. H.

AU - Chen, L. C.

AU - Chen, C. C.

PY - 2004/6/28

Y1 - 2004/6/28

N2 - Hexagonal-to-cubic phase transformation was carried out in gallium nitride nanowires using gallium ion implantation. The phase transformation was confirmed by performing optical photoluminescence, cathodoluminescence and high-resolution transmission electron microscopy (HRTEM). The deposition of Gallium from the implanted source reduced the surface energy and stablized the cubic phase. It was found that the fluctuations in the short-range order induced by dynamic annealing with the irradiation process stabilize the cubic phase and cause the phase transformation.

AB - Hexagonal-to-cubic phase transformation was carried out in gallium nitride nanowires using gallium ion implantation. The phase transformation was confirmed by performing optical photoluminescence, cathodoluminescence and high-resolution transmission electron microscopy (HRTEM). The deposition of Gallium from the implanted source reduced the surface energy and stablized the cubic phase. It was found that the fluctuations in the short-range order induced by dynamic annealing with the irradiation process stabilize the cubic phase and cause the phase transformation.

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DO - 10.1063/1.1760593

M3 - Article

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SN - 0003-6951

VL - 84

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EP - 5475

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Hexagonal-to-cubic phase transformation in GaN nanowires by Ga⁺ implantation

Abstract

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