Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, C. W. Hsu, C. H. Shen, L. C. Chen, C. C. Chen

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Abstract

Hexagonal-to-cubic phase transformation was carried out in gallium nitride nanowires using gallium ion implantation. The phase transformation was confirmed by performing optical photoluminescence, cathodoluminescence and high-resolution transmission electron microscopy (HRTEM). The deposition of Gallium from the implanted source reduced the surface energy and stablized the cubic phase. It was found that the fluctuations in the short-range order induced by dynamic annealing with the irradiation process stabilize the cubic phase and cause the phase transformation.

Original languageEnglish
Pages (from-to)5473-5475
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number26
DOIs
Publication statusPublished - 2004 Jun 28

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dhara, S., Datta, A., Wu, C. T., Lan, Z. H., Chen, K. H., Wang, Y. L., Hsu, C. W., Shen, C. H., Chen, L. C., & Chen, C. C. (2004). Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation. Applied Physics Letters, 84(26), 5473-5475. https://doi.org/10.1063/1.1760593