Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

M. H. Lee*, S. T. Chang, C. W. Tai, J. D. Shen, C. C. Lee

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not only decreasing electron-hole recombination, but also reducing variation of performance with mechanical strains.

    Original languageEnglish
    Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
    Pages2891-2893
    Number of pages3
    DOIs
    Publication statusPublished - 2011 Dec 1
    Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
    Duration: 2011 Jun 192011 Jun 24

    Publication series

    NameConference Record of the IEEE Photovoltaic Specialists Conference
    ISSN (Print)0160-8371

    Other

    Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
    Country/TerritoryUnited States
    CitySeattle, WA
    Period2011/06/192011/06/24

    ASJC Scopus subject areas

    • Control and Systems Engineering
    • Industrial and Manufacturing Engineering
    • Electrical and Electronic Engineering

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