Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending

M. H. Lee, S. T. Chang, C. W. Tai, J. D. Shen, C. C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cell with mechanical bending was studied in this work. The efficiency decreased with mechanical strain increasing due to bandgap narrowing. The advantage of wafer thin down for HIT is not only decreasing electron-hole recombination, but also reducing variation of performance with mechanical strains.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages2891-2893
Number of pages3
DOIs
Publication statusPublished - 2011 Dec 1
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 2011 Jun 192011 Jun 24

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period11/6/1911/6/24

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Lee, M. H., Chang, S. T., Tai, C. W., Shen, J. D., & Lee, C. C. (2011). Heterojunction with intrinsic thin layer (HIT) solar cell under mechanical bending. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2891-2893). [6186550] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186550