Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)

Tai Yen Peng; C. K. Lo; Y. D. Yao; San Yuan Chen

doi:10.1063/1.2711658

Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)

Tai Yen Peng^*, C. K. Lo, Y. D. Yao, San Yuan Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Growing sixfold symmetric osmium (Os) epitaxial films with suitable buffer layers was developed. Using a Cu buffer layer, the lattice mismatch between Os (0002) and Si (100) was significantly reduced from >30% to ∼7% to grow Os films with twin relationships and weak sixfold symmetries. On the other hand, the CuAu buffer layer was selected to form a fcc (111) surface mesh on H-Si (111)- 1×1, and therefore sixfold symmetric Os films were grown due to the lower lattice mismatch. Such growth properties may be applied in the high density magnetic random access memory manufacturing processes to connect the magnetic tunnel junction growth and Cu metal line directly.

Original language	English
Article number	121904
Journal	Applied Physics Letters
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.2711658
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)",

abstract = "Growing sixfold symmetric osmium (Os) epitaxial films with suitable buffer layers was developed. Using a Cu buffer layer, the lattice mismatch between Os (0002) and Si (100) was significantly reduced from >30% to ∼7% to grow Os films with twin relationships and weak sixfold symmetries. On the other hand, the CuAu buffer layer was selected to form a fcc (111) surface mesh on H-Si (111)- 1×1, and therefore sixfold symmetric Os films were grown due to the lower lattice mismatch. Such growth properties may be applied in the high density magnetic random access memory manufacturing processes to connect the magnetic tunnel junction growth and Cu metal line directly.",

author = "Peng, {Tai Yen} and Lo, {C. K.} and Yao, {Y. D.} and Chen, {San Yuan}",

note = "Funding Information: This work was financially supported by ROC MOEA and NSC under Grant Nos. 5301XS4210 and NSC95-2112-M-001-059, respectively.",

year = "2007",

doi = "10.1063/1.2711658",

language = "English",

volume = "90",

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TY - JOUR

T1 - Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)

AU - Peng, Tai Yen

AU - Lo, C. K.

AU - Yao, Y. D.

AU - Chen, San Yuan

N1 - Funding Information: This work was financially supported by ROC MOEA and NSC under Grant Nos. 5301XS4210 and NSC95-2112-M-001-059, respectively.

PY - 2007

Y1 - 2007

N2 - Growing sixfold symmetric osmium (Os) epitaxial films with suitable buffer layers was developed. Using a Cu buffer layer, the lattice mismatch between Os (0002) and Si (100) was significantly reduced from >30% to ∼7% to grow Os films with twin relationships and weak sixfold symmetries. On the other hand, the CuAu buffer layer was selected to form a fcc (111) surface mesh on H-Si (111)- 1×1, and therefore sixfold symmetric Os films were grown due to the lower lattice mismatch. Such growth properties may be applied in the high density magnetic random access memory manufacturing processes to connect the magnetic tunnel junction growth and Cu metal line directly.

AB - Growing sixfold symmetric osmium (Os) epitaxial films with suitable buffer layers was developed. Using a Cu buffer layer, the lattice mismatch between Os (0002) and Si (100) was significantly reduced from >30% to ∼7% to grow Os films with twin relationships and weak sixfold symmetries. On the other hand, the CuAu buffer layer was selected to form a fcc (111) surface mesh on H-Si (111)- 1×1, and therefore sixfold symmetric Os films were grown due to the lower lattice mismatch. Such growth properties may be applied in the high density magnetic random access memory manufacturing processes to connect the magnetic tunnel junction growth and Cu metal line directly.

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JF - Applied Physics Letters

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ER -

Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)

Abstract

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