Hetero-tunnel field-effect-transistors with epitaxially grown germanium on silicon

Min Hung Lee, Jhe Cyun Lin, Cheng Ying Kao

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The epitaxially grown Ge (epi-Ge)/Si hetero-tunnel field-effect transistors (HTFETs) is demonstrated to enhance band-to-band tunneling (BTBT) current because of effective bandgap reduction. The epi-Ge HTFET has a drain current as high as 11 μAμm at V GS= V DS=-2 V, which enhances 2.3× as compared with that of Si, and the drain-induced barrier thinning (DIBT) shows 28 mV/V. The smaller subthreshold swing of epi-Ge HTFET is obtained as compared with Si. The current mechanism of BTBT is confirmed at the interface of epi-Ge/Si hetero-tunneling occurring in the n+-region by hole barrier height extraction. The gate/source overlap lengths for parallel-plate tunneling region are discussed for current and DIBT.

Original languageEnglish
Article number6527300
Pages (from-to)2423-2427
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 2013


  • Drain-induced barrier thinning (DIBT)
  • hetero-tunnel
  • subthreshold swing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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