Hetero-tunnel field-effect-transistors with epitaxially grown germanium on silicon

Min Hung Lee, Jhe Cyun Lin, Cheng Ying Kao

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)


    The epitaxially grown Ge (epi-Ge)/Si hetero-tunnel field-effect transistors (HTFETs) is demonstrated to enhance band-to-band tunneling (BTBT) current because of effective bandgap reduction. The epi-Ge HTFET has a drain current as high as 11 μAμm at V GS= V DS=-2 V, which enhances 2.3× as compared with that of Si, and the drain-induced barrier thinning (DIBT) shows 28 mV/V. The smaller subthreshold swing of epi-Ge HTFET is obtained as compared with Si. The current mechanism of BTBT is confirmed at the interface of epi-Ge/Si hetero-tunneling occurring in the n+-region by hole barrier height extraction. The gate/source overlap lengths for parallel-plate tunneling region are discussed for current and DIBT.

    Original languageEnglish
    Article number6527300
    Pages (from-to)2423-2427
    Number of pages5
    JournalIEEE Transactions on Electron Devices
    Issue number7
    Publication statusPublished - 2013 Jul 15


    • Drain-induced barrier thinning (DIBT)
    • hetero-tunnel
    • subthreshold swing

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering


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