Hall effect, magnetoresistivity and magnetic properties of MgB2 thin films with AlN buffer layers

G. Ilonca, T. R. Yang, A. V. Pop, P. Balint, M. Bodea, E. MacOcian

Research output: Contribution to journalArticlepeer-review


MgB2 thin films were deposited at low temperature substrates, in situ, on c-plane sapphire substrates, with the aluminium nitride (AlN) buffer layers, using the multiple-target sputtering system. The magnetoresistivities were measured using dc-five probe method in applied magnetic field up to 9 Tesla. The upper critical field anisotropy, HC2 (T) and irreversibility field Hirr (T) versus temperature were determined. The Hall coefficients R(H) are slightly temperature dependent and positive in the normal state. The critical temperature of 30-32 K and critical current density of 106-107A/cm2 at 4.2 K were obtained. Using extracted data, the coherence length ξo, anisotropic coefficient γ and penetration depth λL were calculated.

Original languageEnglish
Pages (from-to)991-996
Number of pages6
JournalInternational Journal of Modern Physics B
Issue number8
Publication statusPublished - 2008 Mar 30


  • Epitaxial films
  • Resistivity
  • Uperconducting

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics


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