Hall effect, magnetoresistivity and magnetic properties of MgB 2 thin films with AlN buffer layers

G. Ilonca, Tzuen-Rong Yang, A. V. Pop, P. Balint, M. Bodea, E. MacOcian

Research output: Contribution to journalArticle

Abstract

MgB 2 thin films were deposited at low temperature substrates, in situ, on c-plane sapphire substrates, with the aluminium nitride (AlN) buffer layers, using the multiple-target sputtering system. The magnetoresistivities were measured using dc-five probe method in applied magnetic field up to 9 Tesla. The upper critical field anisotropy, H C2 (T) and irreversibility field H irr (T) versus temperature were determined. The Hall coefficients R(H) are slightly temperature dependent and positive in the normal state. The critical temperature of 30-32 K and critical current density of 10 6 -10 7 A/cm 2 at 4.2 K were obtained. Using extracted data, the coherence length ξ o , anisotropic coefficient γ and penetration depth λ L were calculated.

Original languageEnglish
Pages (from-to)991-996
Number of pages6
JournalInternational Journal of Modern Physics B
Volume22
Issue number8
DOIs
Publication statusPublished - 2008 Mar 30

Fingerprint

magnetoresistivity
aluminum nitrides
Hall effect
buffers
magnetic properties
thin films
critical current
critical temperature
sapphire
penetration
sputtering
current density
anisotropy
temperature
coefficients
magnetic fields

Keywords

  • Epitaxial films
  • Resistivity
  • Uperconducting

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

Cite this

Hall effect, magnetoresistivity and magnetic properties of MgB 2 thin films with AlN buffer layers . / Ilonca, G.; Yang, Tzuen-Rong; Pop, A. V.; Balint, P.; Bodea, M.; MacOcian, E.

In: International Journal of Modern Physics B, Vol. 22, No. 8, 30.03.2008, p. 991-996.

Research output: Contribution to journalArticle

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