Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer
- S. W. Lee*
- , Y. L. Chueh
- , L. J. Chen
- , L. J. Chou
- , P. S. Chen
- , M. H. Lee
- , M. J. Tsai
- , C. W. Liu
*Corresponding author for this work
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