Growth of nano-sized copper seed layer on TiN and TaSiN by new non-toxic electroless plating

R. S. Liu, C. C. You, M. S. Tsai, S. F. Hu, K. Lee, J. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The purpose of this research is to explore the properties of a copper seed layer grown by electroless plating on TiN. We have developed a displacement layer made of amorphous silicon (a-Si) and copper contact displacement process to improve the island structure of copper activated layer which can then be grown directly on the surface of TiN. Furthermore, this research proposes glyoxylic acid as a replacement for formaldehyde, which is commonly used at present as a reductant but regarded as a carcinogen, and is of high volatility. The copper seed layer has been grown by the electroless plating method on an activated surface of TiN, at the set temperature of 60°C with the plating bath consisting of the copper source, complexing agent, stabilizer and surfactant. The existence of a copper seed layer provides not only the conduction layer, but also the copper nucleation layer, to help the growth of electroplated copper on the surface of TiN. Moreover, based on the results of the studies can lead us to grow a nano-sized Cu seed layer on the top of a TaSiN layer.

Original languageEnglish
Title of host publicationProceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
PublisherIEEE Computer Society
Pages17-20
Number of pages4
ISBN (Electronic)0780375386
DOIs
Publication statusPublished - 2002 Jan 1
Event2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 - Washington, United States
Duration: 2002 Aug 262002 Aug 28

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2002-January
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002
CountryUnited States
CityWashington
Period02/8/2602/8/28

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Keywords

  • Chemicals
  • Chemistry
  • Conductivity
  • Copper
  • Dielectric substrates
  • Electromigration
  • Filling
  • Laboratories
  • Temperature
  • Tin

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Liu, R. S., You, C. C., Tsai, M. S., Hu, S. F., Lee, K., & Lu, J. (2002). Growth of nano-sized copper seed layer on TiN and TaSiN by new non-toxic electroless plating. In Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, IEEE-NANO 2002 (pp. 17-20). [1032113] (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2002-January). IEEE Computer Society. https://doi.org/10.1109/NANO.2002.1032113