Growth of high-Tc YBa2Cu3Oy films with an off-axis sputtering configuration

L. M. Wang*, H. H. Sung, J. H. Chern, H. C. Yang, H. E. Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Using an off-axis rf sputtering configuration, we have prepared in situ high-Tc YBa2Cu3O7-y (YBCO) films with a relatively large deposition rate. The sputtering gas was a mixture of Ar and O2 (7:3) and the substrates were MgO(100) and SrTiO 3(100). We found that the distance from the target to the substrate, d, is a key factor in the deposition rate. By decreasing d to a value of about 1.5-2.5 cm, we obtained a deposition rate as great as 2000-2500 Å per hour with an rf power of 120 W and at a total pressure 100-200 mTorr. The transport behaviors of the as-grown YBCO films under magnetic fields are reported. The activation energy derived from the resistive transition in magnetic fields is thickness dependent.

Original languageEnglish
Pages (from-to)8419-8422
Number of pages4
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 1993

ASJC Scopus subject areas

  • General Physics and Astronomy


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