Growth of high-Tc YBa2Cu3Oy films with an off-axis sputtering configuration

L. M. Wang, H. H. Sung, J. H. Chern, Hong-Chang Yang, Herng-Er Horng

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Abstract

Using an off-axis rf sputtering configuration, we have prepared in situ high-Tc YBa2Cu3O7-y (YBCO) films with a relatively large deposition rate. The sputtering gas was a mixture of Ar and O2 (7:3) and the substrates were MgO(100) and SrTiO 3(100). We found that the distance from the target to the substrate, d, is a key factor in the deposition rate. By decreasing d to a value of about 1.5-2.5 cm, we obtained a deposition rate as great as 2000-2500 Å per hour with an rf power of 120 W and at a total pressure 100-200 mTorr. The transport behaviors of the as-grown YBCO films under magnetic fields are reported. The activation energy derived from the resistive transition in magnetic fields is thickness dependent.

Original languageEnglish
Pages (from-to)8419-8422
Number of pages4
JournalJournal of Applied Physics
Volume73
Issue number12
DOIs
Publication statusPublished - 1993 Dec 1

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sputtering
configurations
magnetic fields
activation energy
gases

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Growth of high-Tc YBa2Cu3Oy films with an off-axis sputtering configuration. / Wang, L. M.; Sung, H. H.; Chern, J. H.; Yang, Hong-Chang; Horng, Herng-Er.

In: Journal of Applied Physics, Vol. 73, No. 12, 01.12.1993, p. 8419-8422.

Research output: Contribution to journalArticle

Wang, L. M. ; Sung, H. H. ; Chern, J. H. ; Yang, Hong-Chang ; Horng, Herng-Er. / Growth of high-Tc YBa2Cu3Oy films with an off-axis sputtering configuration. In: Journal of Applied Physics. 1993 ; Vol. 73, No. 12. pp. 8419-8422.
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