INIS
films
100%
layers
100%
growth
100%
quantum dots
100%
buffers
100%
germanium silicides
100%
devices
50%
density
33%
strains
33%
dislocations
33%
control
16%
increasing
16%
substrates
16%
speed
16%
oxides
16%
transistors
16%
metals
16%
chemical vapor deposition
16%
semiconductor materials
16%
electron mobility
16%
ultrahigh vacuum
16%
Material Science
Buffer Layer
100%
Quantum Dot
100%
Strain
50%
Devices
50%
Film
50%
Density
50%
Transistor
25%
Metal Oxide
25%
Chemical Vapor Deposition
25%
Epilayers
25%
Electron Mobility
25%
Oxide Semiconductor
25%
Control Component
25%
Physics
Quantum Dot
100%
Growth
100%
Dislocation
66%
Increasing
33%
Transistor
33%
Metal Oxide Semiconductor
33%
Substrates
33%
High Speed
33%
Electron Mobility
33%
Ultrahigh Vacuum
33%
Engineering
High Quality
100%
Buffer Layer
100%
Residual Strain
50%
Si Device
50%
Threading Dislocation
50%
Dislocation Density
50%
Substrates
25%
High Speed
25%
High Vacuum
25%