Growth of epitaxial needlelike ZnO nanowires on GaN films

Yung Kuan Tseng, Chih Ta Chia, Chien Yih Tsay, Li Jiaun Lin, Hsin Min Cheng, Chung Yi Kwo, I. Cherng Chen

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Abstract

Epitaxial needlelike ZnO nanowires were grown vertically over an entire epi-GaN/sapphire substrate at 550°C by low-pressure vapor phase deposition without employing any metal catalysts. A two-step oxygen injection process is the key of successful synthesis. The length of ZnO wires was up to 3.0 μm. The diameters of the roots and tips of the ZnO nanowires were around 80-100 and 15-30 nm, respectively. X-ray diffraction showed the epitaxial orientation relationship between ZnO and GaN as [001]Zno//[001]GiN along the normal to the plane, and [100]Zno//[100]GaN along the in-plane direction, consistent with the selective area electron diffraction pattern taken at the ZnO/GaN heterointerface. High-resolution transmission electron microscopy confirmed that nanowire was a single crystal. A room-temperature photoluminescence spectrum of the wires revealed a low concentration of oxygen vacancy in the ZnO nanowires and showed high optical quality.

Original languageEnglish
Pages (from-to)G95-G98
JournalJournal of the Electrochemical Society
Volume152
Issue number1
DOIs
Publication statusPublished - 2005 Feb 7

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Tseng, Y. K., Chia, C. T., Tsay, C. Y., Lin, L. J., Cheng, H. M., Kwo, C. Y., & Chen, I. C. (2005). Growth of epitaxial needlelike ZnO nanowires on GaN films. Journal of the Electrochemical Society, 152(1), G95-G98. https://doi.org/10.1149/1.1825953