Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods

Z. H. Lan; W. M. Wang; C. L. Sun; S. C. Shi; C. W. Hsu; T. T. Chen; K. H. Chen; C. C. Chen; Y. F. Chen; L. C. Chen

doi:10.1016/j.jcrysgro.2004.05.037

Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods

Z. H. Lan, W. M. Wang, C. L. Sun, S. C. Shi, C. W. Hsu, T. T. Chen, K. H. Chen, C. C. Chen, Y. F. Chen, L. C. Chen^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

103 Citations (Scopus)

Abstract

High-quality single crystal indium nitride nanorods were grown on Si substrates by catalytic chemical vapor deposition. Both Raman and high resolution transmission electron microscopic analyses suggested that even a minute amount of oxygen, from the residual oxygen in the growth environment and/or native oxide on the Si, would effectively help the growth of InN nanorods. The In₂O₃ formed on Au nanoparticles helped dissolve nitrogen as a catalyst with the subsequent growth of InN nanorods. Variations in the apparent color and photoluminescence (PL) spectra of the InN nanorods were observed. For the optically brown InN nanorods that exhibited diameters in the range of 30-50nm, the PL study showed a peak at 1.9eV, the possible origins of which are discussed. In contrast, for the optically black InN nanorods that exhibited diameters in the range of 50-100nm, the PL peak at approximately 0.766eV measured at 20K was attributed to band edge emission.

Original language	English
Pages (from-to)	87-94
Number of pages	8
Journal	Journal of Crystal Growth
Volume	269
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.05.037
Publication status	Published - 2004 Aug 15
Event	Proceedings of the First ONR International Indium Nitride Work - Fremantle, Australia Duration: 2003 Nov 16 → 2003 Nov 20

Keywords

A1. Photoluminescence
B1. Indium nitride
B1. Nanorods

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.05.037

Cite this

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title = "Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods",

abstract = "High-quality single crystal indium nitride nanorods were grown on Si substrates by catalytic chemical vapor deposition. Both Raman and high resolution transmission electron microscopic analyses suggested that even a minute amount of oxygen, from the residual oxygen in the growth environment and/or native oxide on the Si, would effectively help the growth of InN nanorods. The In2O3 formed on Au nanoparticles helped dissolve nitrogen as a catalyst with the subsequent growth of InN nanorods. Variations in the apparent color and photoluminescence (PL) spectra of the InN nanorods were observed. For the optically brown InN nanorods that exhibited diameters in the range of 30-50nm, the PL study showed a peak at 1.9eV, the possible origins of which are discussed. In contrast, for the optically black InN nanorods that exhibited diameters in the range of 50-100nm, the PL peak at approximately 0.766eV measured at 20K was attributed to band edge emission.",

keywords = "A1. Photoluminescence, B1. Indium nitride, B1. Nanorods",

author = "Lan, {Z. H.} and Wang, {W. M.} and Sun, {C. L.} and Shi, {S. C.} and Hsu, {C. W.} and Chen, {T. T.} and Chen, {K. H.} and Chen, {C. C.} and Chen, {Y. F.} and Chen, {L. C.}",

note = "Funding Information: This research was supported by the National Science Council and Ministry of Education in Taiwan. The authors would like to thank Dr. S. Dhara and Dr. S. Chattopadhyay for fruitful discussions.; Proceedings of the First ONR International Indium Nitride Work ; Conference date: 16-11-2003 Through 20-11-2003",

year = "2004",

month = aug,

day = "15",

doi = "10.1016/j.jcrysgro.2004.05.037",

language = "English",

volume = "269",

pages = "87--94",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "1",

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TY - JOUR

T1 - Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods

AU - Lan, Z. H.

AU - Wang, W. M.

AU - Sun, C. L.

AU - Shi, S. C.

AU - Hsu, C. W.

AU - Chen, T. T.

AU - Chen, K. H.

AU - Chen, C. C.

AU - Chen, Y. F.

AU - Chen, L. C.

N1 - Funding Information: This research was supported by the National Science Council and Ministry of Education in Taiwan. The authors would like to thank Dr. S. Dhara and Dr. S. Chattopadhyay for fruitful discussions.

PY - 2004/8/15

Y1 - 2004/8/15

N2 - High-quality single crystal indium nitride nanorods were grown on Si substrates by catalytic chemical vapor deposition. Both Raman and high resolution transmission electron microscopic analyses suggested that even a minute amount of oxygen, from the residual oxygen in the growth environment and/or native oxide on the Si, would effectively help the growth of InN nanorods. The In2O3 formed on Au nanoparticles helped dissolve nitrogen as a catalyst with the subsequent growth of InN nanorods. Variations in the apparent color and photoluminescence (PL) spectra of the InN nanorods were observed. For the optically brown InN nanorods that exhibited diameters in the range of 30-50nm, the PL study showed a peak at 1.9eV, the possible origins of which are discussed. In contrast, for the optically black InN nanorods that exhibited diameters in the range of 50-100nm, the PL peak at approximately 0.766eV measured at 20K was attributed to band edge emission.

AB - High-quality single crystal indium nitride nanorods were grown on Si substrates by catalytic chemical vapor deposition. Both Raman and high resolution transmission electron microscopic analyses suggested that even a minute amount of oxygen, from the residual oxygen in the growth environment and/or native oxide on the Si, would effectively help the growth of InN nanorods. The In2O3 formed on Au nanoparticles helped dissolve nitrogen as a catalyst with the subsequent growth of InN nanorods. Variations in the apparent color and photoluminescence (PL) spectra of the InN nanorods were observed. For the optically brown InN nanorods that exhibited diameters in the range of 30-50nm, the PL study showed a peak at 1.9eV, the possible origins of which are discussed. In contrast, for the optically black InN nanorods that exhibited diameters in the range of 50-100nm, the PL peak at approximately 0.766eV measured at 20K was attributed to band edge emission.

KW - A1. Photoluminescence

KW - B1. Indium nitride

KW - B1. Nanorods

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SN - 0022-0248

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SP - 87

EP - 94

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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T2 - Proceedings of the First ONR International Indium Nitride Work

Y2 - 16 November 2003 through 20 November 2003

ER -

Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods

Abstract

Keywords

ASJC Scopus subject areas

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