Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods

Z. H. Lan, W. M. Wang, C. L. Sun, S. C. Shi, C. W. Hsu, T. T. Chen, K. H. Chen, C. C. Chen, Y. F. Chen, L. C. Chen

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Abstract

High-quality single crystal indium nitride nanorods were grown on Si substrates by catalytic chemical vapor deposition. Both Raman and high resolution transmission electron microscopic analyses suggested that even a minute amount of oxygen, from the residual oxygen in the growth environment and/or native oxide on the Si, would effectively help the growth of InN nanorods. The In2O3 formed on Au nanoparticles helped dissolve nitrogen as a catalyst with the subsequent growth of InN nanorods. Variations in the apparent color and photoluminescence (PL) spectra of the InN nanorods were observed. For the optically brown InN nanorods that exhibited diameters in the range of 30-50nm, the PL study showed a peak at 1.9eV, the possible origins of which are discussed. In contrast, for the optically black InN nanorods that exhibited diameters in the range of 50-100nm, the PL peak at approximately 0.766eV measured at 20K was attributed to band edge emission.

Original languageEnglish
Pages (from-to)87-94
Number of pages8
JournalJournal of Crystal Growth
Volume269
Issue number1
DOIs
Publication statusPublished - 2004 Aug 15
EventProceedings of the First ONR International Indium Nitride Work - Fremantle, Australia
Duration: 2003 Nov 162003 Nov 20

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Keywords

  • A1. Photoluminescence
  • B1. Indium nitride
  • B1. Nanorods

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Lan, Z. H., Wang, W. M., Sun, C. L., Shi, S. C., Hsu, C. W., Chen, T. T., Chen, K. H., Chen, C. C., Chen, Y. F., & Chen, L. C. (2004). Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods. Journal of Crystal Growth, 269(1), 87-94. https://doi.org/10.1016/j.jcrysgro.2004.05.037