Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

Xiao Lan Huang; Chun Liang Lin; Chun Rong Chen; Agnieszka Tomaszewska; Tsu Yi Fu

doi:10.1109/INEC.2011.5991672

Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

Xiao Lan Huang, Chun Liang Lin, Chun Rong Chen, Agnieszka Tomaszewska, Tsu Yi Fu^*

^*Corresponding author for this work

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991672
Publication status	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	2011/06/21 → 2011/06/24

Keywords

Co
Ge(111)
STM
island growth

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991672

Cite this

Huang, XL, Lin, CL, Chen, CR, Tomaszewska, A & Fu, TY 2011, Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991672, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991672

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title = "Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface",

abstract = "Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.",

keywords = "Co, Ge(111), STM, island growth",

author = "Huang, {Xiao Lan} and Lin, {Chun Liang} and Chen, {Chun Rong} and Agnieszka Tomaszewska and Fu, {Tsu Yi}",

year = "2011",

doi = "10.1109/INEC.2011.5991672",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

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T1 - Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

AU - Huang, Xiao Lan

AU - Lin, Chun Liang

AU - Chen, Chun Rong

AU - Tomaszewska, Agnieszka

AU - Fu, Tsu Yi

PY - 2011

Y1 - 2011

N2 - Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.

AB - Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.

KW - Co

KW - Ge(111)

KW - STM

KW - island growth

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U2 - 10.1109/INEC.2011.5991672

DO - 10.1109/INEC.2011.5991672

M3 - Conference contribution

AN - SCOPUS:80053015795

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -

Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

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