Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

Xiao Lan Huang, Chun Liang Lin, Chun Rong Chen, Agnieszka Tomaszewska, Tsu Yi Fu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 21 → 2011 Jun 24

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11/6/21 → 11/6/24

Keywords

  • Co
  • Ge(111)
  • island growth
  • STM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Access to Document

Fingerprint Dive into the research topics of 'Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface'. Together they form a unique fingerprint.

    • Cite this

    Huang, X. L., Lin, C. L., Chen, C. R., Tomaszewska, A., & Fu, T. Y. (2011). Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991672] https://doi.org/10.1109/INEC.2011.5991672