Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface

Xiao Lan Huang, Chun Liang Lin, Chun Rong Chen, Agnieszka Tomaszewska, Tsu Yi Fu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 2011 Jun 212011 Jun 24

Other

Other4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period11/6/2111/6/24

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Atoms

Keywords

  • Co
  • Ge(111)
  • island growth
  • STM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Huang, X. L., Lin, C. L., Chen, C. R., Tomaszewska, A., & Fu, T. Y. (2011). Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991672] https://doi.org/10.1109/INEC.2011.5991672

Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface. / Huang, Xiao Lan; Lin, Chun Liang; Chen, Chun Rong; Tomaszewska, Agnieszka; Fu, Tsu Yi.

4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991672.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Huang, XL, Lin, CL, Chen, CR, Tomaszewska, A & Fu, TY 2011, Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991672, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 11/6/21. https://doi.org/10.1109/INEC.2011.5991672
Huang XL, Lin CL, Chen CR, Tomaszewska A, Fu TY. Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface. In 4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991672 https://doi.org/10.1109/INEC.2011.5991672
Huang, Xiao Lan ; Lin, Chun Liang ; Chen, Chun Rong ; Tomaszewska, Agnieszka ; Fu, Tsu Yi. / Growth mechanism of Co-2×2 islands on Ag/Ge(111)- √3×√3 surface. 4th IEEE International NanoElectronics Conference, INEC 2011. 2011.
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