Abstract
Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along [0001] crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.
Original language | English |
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Title of host publication | 4th IEEE International NanoElectronics Conference, INEC 2011 |
DOIs | |
Publication status | Published - 2011 |
Event | 4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24 |
Other
Other | 4th IEEE International Nanoelectronics Conference, INEC 2011 |
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Country | Taiwan |
City | Tao-Yuan |
Period | 2011/06/21 → 2011/06/24 |
Keywords
- Co
- Ge(111)
- island growth
- STM
ASJC Scopus subject areas
- Electrical and Electronic Engineering