Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on β-SiC coated (001) Si substrates

J. G. Kim*, A. C. Frenkel, H. Liu, R. M. Park

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

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Physics & Astronomy