Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on β-SiC coated (001) Si substrates

J. G. Kim, A. C. Frenkel, H. Liu, R. M. Park

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Abstract

We report the electrical characteristics of heavily Si-doped zinc blende GaN epilayers deposited on β-SiC coated (001) Si substrates. The β-GaN films were grown by molecular beam epitaxy using a rf plasma discharge, nitrogen free-radical source, and the doping concentration in the films was controlled over the range 1.5×1018-3.0×1020 cm-3 by suitably adjusting the temperature of a Si effusion cell. We have found that Si incorporation in β-GaN results in a relatively deep donor level (∼62 meV below the conduction band edge at a carrier concentration at room temperature of 1018 cm-3). Also, we present evidence of simultaneous high mobility conduction band conduction (dominant at high temperatures) and low mobility impurity band conduction (dominant at temperatures <70 K) in heavily doped (nRT≳ 1019 cm-3) material.

Original languageEnglish
Pages (from-to)91-93
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number1
DOIs
Publication statusPublished - 1994 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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