Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

Shiu Jen Liu; Shyh Feng Chen; Jenh Yih Juang; Jiunn Yuan Lin; Kaung Hsiung Wu; Tseng Ming Uen; Yi Shun Gou

doi:10.1143/jjap.42.l287

Growth and transport properties of (110)-oriented La_2/3Sr_1/3MnO₃ thin films on TiO₂-buffered Si (100) substrates

Shiu Jen Liu^*, Shyh Feng Chen, Jenh Yih Juang, Jiunn Yuan Lin, Kaung Hsiung Wu, Tseng Ming Uen, Yi Shun Gou

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

2 Citations (Scopus)

Abstract

The growth and transport properties of (110)-oriented La_2/3Sr_1/3MnO₃ thin films on TiO₂-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T²- to T³-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

Original language	English
Pages (from-to)	L287-L290
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	3 B
DOIs	https://doi.org/10.1143/jjap.42.l287
Publication status	Published - 2003 Mar 15
Externally published	Yes

Keywords

Buffer layer
Colossal magnetoresistance
Hole-doped manganite
Insulator-metal transition
One-magnon scattering
Pulsed-laser deposition
Titanium dioxide
Transport properties

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.42.l287

Cite this

@article{dff7780274fd4edba781dedffee1fbff,

title = "Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates",

abstract = "The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.",

keywords = "Buffer layer, Colossal magnetoresistance, Hole-doped manganite, Insulator-metal transition, One-magnon scattering, Pulsed-laser deposition, Titanium dioxide, Transport properties",

author = "Liu, {Shiu Jen} and Chen, {Shyh Feng} and Juang, {Jenh Yih} and Lin, {Jiunn Yuan} and Wu, {Kaung Hsiung} and Uen, {Tseng Ming} and Gou, {Yi Shun}",

year = "2003",

month = mar,

day = "15",

doi = "10.1143/jjap.42.l287",

language = "English",

volume = "42",

pages = "L287--L290",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 B",

}

TY - JOUR

T1 - Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

AU - Liu, Shiu Jen

AU - Chen, Shyh Feng

AU - Juang, Jenh Yih

AU - Lin, Jiunn Yuan

AU - Wu, Kaung Hsiung

AU - Uen, Tseng Ming

AU - Gou, Yi Shun

PY - 2003/3/15

Y1 - 2003/3/15

N2 - The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

AB - The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

KW - Buffer layer

KW - Colossal magnetoresistance

KW - Hole-doped manganite

KW - Insulator-metal transition

KW - One-magnon scattering

KW - Pulsed-laser deposition

KW - Titanium dioxide

KW - Transport properties

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U2 - 10.1143/jjap.42.l287

DO - 10.1143/jjap.42.l287

M3 - Letter

AN - SCOPUS:0037762594

SN - 0021-4922

VL - 42

SP - L287-L290

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 B

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