Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

Shiu Jen Liu, Shyh Feng Chen, Jenh Yih Juang, Jiunn Yuan Lin, Kaung Hsiung Wu, Tseng Ming Uen, Yi Shun Gou

Research output: Contribution to journalLetter

2 Citations (Scopus)

Abstract

The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

Original languageEnglish
Pages (from-to)L287-L290
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number3 B
Publication statusPublished - 2003 Mar 15

Fingerprint

Metal insulator transition
Magnetic variables measurement
Magnetoresistance
Pulsed laser deposition
Transport properties
Superconducting transition temperature
transport properties
insulators
Scattering
Magnetic fields
Thin films
Silicon
Substrates
thin films
Metals
pulsed laser deposition
magnetic measurement
crossovers
transition metals
transition temperature

Keywords

  • Buffer layer
  • Colossal magnetoresistance
  • Hole-doped manganite
  • Insulator-metal transition
  • One-magnon scattering
  • Pulsed-laser deposition
  • Titanium dioxide
  • Transport properties

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates. / Liu, Shiu Jen; Chen, Shyh Feng; Juang, Jenh Yih; Lin, Jiunn Yuan; Wu, Kaung Hsiung; Uen, Tseng Ming; Gou, Yi Shun.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 3 B, 15.03.2003, p. L287-L290.

Research output: Contribution to journalLetter

Liu, Shiu Jen ; Chen, Shyh Feng ; Juang, Jenh Yih ; Lin, Jiunn Yuan ; Wu, Kaung Hsiung ; Uen, Tseng Ming ; Gou, Yi Shun. / Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates. In: Japanese Journal of Applied Physics, Part 2: Letters. 2003 ; Vol. 42, No. 3 B. pp. L287-L290.
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abstract = "The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20{\%} in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.",
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AU - Liu, Shiu Jen

AU - Chen, Shyh Feng

AU - Juang, Jenh Yih

AU - Lin, Jiunn Yuan

AU - Wu, Kaung Hsiung

AU - Uen, Tseng Ming

AU - Gou, Yi Shun

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N2 - The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

AB - The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

KW - Buffer layer

KW - Colossal magnetoresistance

KW - Hole-doped manganite

KW - Insulator-metal transition

KW - One-magnon scattering

KW - Pulsed-laser deposition

KW - Titanium dioxide

KW - Transport properties

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SN - 0021-4922

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