Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

Shiu Jen Liu, Shyh Feng Chen, Jenh Yih Juang, Jiunn Yuan Lin, Kaung Hsiung Wu, Tseng Ming Uen, Yi Shun Gou

Research output: Contribution to journalLetterpeer-review

2 Citations (Scopus)


The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

Original languageEnglish
Pages (from-to)L287-L290
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number3 B
Publication statusPublished - 2003 Mar 15


  • Buffer layer
  • Colossal magnetoresistance
  • Hole-doped manganite
  • Insulator-metal transition
  • One-magnon scattering
  • Pulsed-laser deposition
  • Titanium dioxide
  • Transport properties

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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