Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung Min Lin, Jian Yang, Yong Lin Chen, Yau Chung Liu, Kai Min Yin, Ji Jung Kai, Fu Rong Chen, Li Chyong Chen, Yang Fang Chen, Chia Chun Chen*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

Original languageEnglish
Pages (from-to)23-30
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2003
EventUnconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing - San Francisco, CA, United States
Duration: 2003 Apr 212003 Apr 25

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires'. Together they form a unique fingerprint.

Cite this