Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung Min Lin; Jian Yang; Yong Lin Chen; Yau Chung Liu; Kai Min Yin; Ji Jung Kai; Fu Rong Chen; Li Chyong Chen; Yang Fang Chen; Chia Chun Chen

doi:10.1557/proc-776-q2.6

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung Min Lin, Jian Yang, Yong Lin Chen, Yau Chung Liu, Kai Min Yin, Ji Jung Kai, Fu Rong Chen, Li Chyong Chen, Yang Fang Chen, Chia Chun Chen^*

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Conference article › peer-review

Abstract

High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm^-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

Original language	English
Pages (from-to)	23-30
Number of pages	8
Journal	Materials Research Society Symposium - Proceedings
Volume	776
DOIs	https://doi.org/10.1557/proc-776-q2.6
Publication status	Published - 2003
Event	Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing - San Francisco, CA, United States Duration: 2003 Apr 21 → 2003 Apr 25

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-776-q2.6

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title = "Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires",

abstract = "High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.",

author = "Lin, {Hung Min} and Jian Yang and Chen, {Yong Lin} and Liu, {Yau Chung} and Yin, {Kai Min} and Kai, {Ji Jung} and Chen, {Fu Rong} and Chen, {Li Chyong} and Chen, {Yang Fang} and Chen, {Chia Chun}",

year = "2003",

doi = "10.1557/proc-776-q2.6",

language = "English",

volume = "776",

pages = "23--30",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing ; Conference date: 21-04-2003 Through 25-04-2003",

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TY - JOUR

T1 - Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

AU - Lin, Hung Min

AU - Yang, Jian

AU - Chen, Yong Lin

AU - Liu, Yau Chung

AU - Yin, Kai Min

AU - Kai, Ji Jung

AU - Chen, Fu Rong

AU - Chen, Li Chyong

AU - Chen, Yang Fang

AU - Chen, Chia Chun

PY - 2003

Y1 - 2003

N2 - High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

AB - High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

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SN - 0272-9172

VL - 776

SP - 23

EP - 30

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing

Y2 - 21 April 2003 through 25 April 2003

ER -

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Abstract

ASJC Scopus subject areas

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