Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung Min Lin, Jian Yang, Yong Lin Chen, Yau Chung Liu, Kai Min Yin, Ji Jung Kai, Fu Rong Chen, Li Chyong Chen, Yang Fang Chen, Chia Chun Chen

Research output: Contribution to journalConference article

Abstract

High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm -1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

Original languageEnglish
Pages (from-to)23-30
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume776
Publication statusPublished - 2003 Dec 1
EventUnconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing - San Francisco, CA, United States
Duration: 2003 Apr 212003 Apr 25

Fingerprint

Nanowires
nanowires
Optical properties
optical properties
Vapor deposition
Lattice mismatch
Piezoelectricity
High resolution transmission electron microscopy
X ray powder diffraction
Raman scattering
Photoluminescence
vapor deposition
wire
Wire
Raman spectra
Semiconductor materials
photoluminescence
transmission electron microscopy
high resolution
diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires. / Lin, Hung Min; Yang, Jian; Chen, Yong Lin; Liu, Yau Chung; Yin, Kai Min; Kai, Ji Jung; Chen, Fu Rong; Chen, Li Chyong; Chen, Yang Fang; Chen, Chia Chun.

In: Materials Research Society Symposium - Proceedings, Vol. 776, 01.12.2003, p. 23-30.

Research output: Contribution to journalConference article

Lin, HM, Yang, J, Chen, YL, Liu, YC, Yin, KM, Kai, JJ, Chen, FR, Chen, LC, Chen, YF & Chen, CC 2003, 'Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires', Materials Research Society Symposium - Proceedings, vol. 776, pp. 23-30.
Lin, Hung Min ; Yang, Jian ; Chen, Yong Lin ; Liu, Yau Chung ; Yin, Kai Min ; Kai, Ji Jung ; Chen, Fu Rong ; Chen, Li Chyong ; Chen, Yang Fang ; Chen, Chia Chun. / Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires. In: Materials Research Society Symposium - Proceedings. 2003 ; Vol. 776. pp. 23-30.
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T1 - Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

AU - Lin, Hung Min

AU - Yang, Jian

AU - Chen, Yong Lin

AU - Liu, Yau Chung

AU - Yin, Kai Min

AU - Kai, Ji Jung

AU - Chen, Fu Rong

AU - Chen, Li Chyong

AU - Chen, Yang Fang

AU - Chen, Chia Chun

PY - 2003/12/1

Y1 - 2003/12/1

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AB - High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm -1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

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