Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

Wen Ting Tu; Chih Hsiung Wang; Ya Yun Huang; Wen Chin Lin

doi:10.1063/1.3537832

Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

Wen Ting Tu^*
, Chih Hsiung Wang
, Ya Yun Huang
, Wen Chin Lin

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Low temperature (LT: 100 K) deposition of Fe on Si (111) 7×7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.

Original language	English
Article number	023908
Journal	Journal of Applied Physics
Volume	109
Issue number	2
DOIs	https://doi.org/10.1063/1.3537832
Publication status	Published - 2011 Jan 15

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3537832

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@article{aa59f1fb799f4a43b6bcf4bae8b1ef81,

title = "Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation",

abstract = "Low temperature (LT: 100 K) deposition of Fe on Si (111) 7×7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.",

author = "Tu, \{Wen Ting\} and Wang, \{Chih Hsiung\} and Huang, \{Ya Yun\} and Lin, \{Wen Chin\}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Grant Nos. NSC 96-2112-M-003-015-MY3, NSC 99-2738-M-003-001, and NSC 99-2112-M-003-009-MY3.",

year = "2011",

month = jan,

day = "15",

doi = "10.1063/1.3537832",

language = "English",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Inc.",

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TY - JOUR

T1 - Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

AU - Tu, Wen Ting

AU - Wang, Chih Hsiung

AU - Huang, Ya Yun

AU - Lin, Wen Chin

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Grant Nos. NSC 96-2112-M-003-015-MY3, NSC 99-2738-M-003-001, and NSC 99-2112-M-003-009-MY3.

PY - 2011/1/15

Y1 - 2011/1/15

N2 - Low temperature (LT: 100 K) deposition of Fe on Si (111) 7×7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.

AB - Low temperature (LT: 100 K) deposition of Fe on Si (111) 7×7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.

UR - https://www.scopus.com/pages/publications/79551676278

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U2 - 10.1063/1.3537832

DO - 10.1063/1.3537832

M3 - Article

AN - SCOPUS:79551676278

SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 023908

ER -

Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

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