Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

Wen Ting Tu, Chih Hsiung Wang, Ya Yun Huang, Wen-Chin Lin

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Abstract

Low temperature (LT: 100 K) deposition of Fe on Si (111) 7×7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.

Original languageEnglish
Article number023908
JournalJournal of Applied Physics
Volume109
Issue number2
DOIs
Publication statusPublished - 2011 Jan 15

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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