Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

Wen Ting Tu, Chih Hsiung Wang, Ya Yun Huang, Wen-Chin Lin

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Low temperature (LT: 100 K) deposition of Fe on Si (111) 7×7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.

Original languageEnglish
Article number023908
JournalJournal of Applied Physics
Volume109
Issue number2
DOIs
Publication statusPublished - 2011 Jan 15

Fingerprint

retarding
room temperature
anisotropy
coercivity
flat surfaces
roughness
annealing

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation. / Tu, Wen Ting; Wang, Chih Hsiung; Huang, Ya Yun; Lin, Wen-Chin.

In: Journal of Applied Physics, Vol. 109, No. 2, 023908, 15.01.2011.

Research output: Contribution to journalArticle

@article{2c4998605e2b46d1989fe974c1cddeb0,
title = "Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation",
abstract = "Low temperature (LT: 100 K) deposition of Fe on Si (111) 7×7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.",
author = "Tu, {Wen Ting} and Wang, {Chih Hsiung} and Huang, {Ya Yun} and Wen-Chin Lin",
year = "2011",
month = "1",
day = "15",
doi = "10.1063/1.3537832",
language = "English",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

AU - Tu, Wen Ting

AU - Wang, Chih Hsiung

AU - Huang, Ya Yun

AU - Lin, Wen-Chin

PY - 2011/1/15

Y1 - 2011/1/15

N2 - Low temperature (LT: 100 K) deposition of Fe on Si (111) 7×7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.

AB - Low temperature (LT: 100 K) deposition of Fe on Si (111) 7×7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion.

UR - http://www.scopus.com/inward/record.url?scp=79551676278&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551676278&partnerID=8YFLogxK

U2 - 10.1063/1.3537832

DO - 10.1063/1.3537832

M3 - Article

AN - SCOPUS:79551676278

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

M1 - 023908

ER -