Growth and characterization of InN epi-films on nitrided Si3N4 layer by RF-MOMBE

Sheng Chen; Wei Chun Chen; Chin Pao Cheng

doi:10.1109/ICIPRM.2019.8819075

Growth and characterization of InN epi-films on nitrided Si₃N₄ layer by RF-MOMBE

Sheng Chen, Wei Chun Chen^*, Chin Pao Cheng

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InN epi-films were grown on nitrided silicon nitride (Si₃N₄) layer/Si(111) substrate by radio-frequency plasma-assisted metal-organic molecular beam epitaxy (RF-MOMBE). We have investigated the effect of nitrided Si₃N₄ layer on the structural, optical and electrical properties of the InN films with different nitridation time. The thickness of the single crystalline β-Si₃N₄ layer was confirmed with index of refraction by Ellipsometer. When the nitridation time at 60 min, the Si₃N₄ layer was nearly to stoichiometry. Also, thickness of Si₃N₄ was measured around 7.23 nm. The X-ray diffraction (XRD) pattern shows a wurtzite InN structure with oriented (0001). Phi-scan XD shows the InN films grew epitaxially on the Si(111) substrates. The mobility of InN layer was determined by Hall effect analyzer and found to be in the range of 16.8-64.1 cm²/V-s.

Original language	English
Title of host publication	2019 Compound Semiconductor Week, CSW 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728100807
DOIs	https://doi.org/10.1109/ICIPRM.2019.8819075
Publication status	Published - 2019 May
Event	2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan Duration: 2019 May 19 → 2019 May 23

Publication series

Name	2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Conference

Conference	2019 Compound Semiconductor Week, CSW 2019
Country/Territory	Japan
City	Nara
Period	2019/05/19 → 2019/05/23

Keywords

indium nitride
silicon nitride

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/ICIPRM.2019.8819075

Cite this

Growth and characterization of InN epi-films on nitrided Si₃N₄ layer by RF-MOMBE. / Chen, Sheng; Chen, Wei Chun; Cheng, Chin Pao.
2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8819075 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, S, Chen, WC & Cheng, CP 2019, Growth and characterization of InN epi-films on nitrided Si₃N₄ layer by RF-MOMBE. in 2019 Compound Semiconductor Week, CSW 2019 - Proceedings., 8819075, 2019 Compound Semiconductor Week, CSW 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Compound Semiconductor Week, CSW 2019, Nara, Japan, 2019/05/19. https://doi.org/10.1109/ICIPRM.2019.8819075

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abstract = "InN epi-films were grown on nitrided silicon nitride (Si3N4) layer/Si(111) substrate by radio-frequency plasma-assisted metal-organic molecular beam epitaxy (RF-MOMBE). We have investigated the effect of nitrided Si3N4 layer on the structural, optical and electrical properties of the InN films with different nitridation time. The thickness of the single crystalline β-Si3N4 layer was confirmed with index of refraction by Ellipsometer. When the nitridation time at 60 min, the Si3N4 layer was nearly to stoichiometry. Also, thickness of Si3N4 was measured around 7.23 nm. The X-ray diffraction (XRD) pattern shows a wurtzite InN structure with oriented (0001). Phi-scan XD shows the InN films grew epitaxially on the Si(111) substrates. The mobility of InN layer was determined by Hall effect analyzer and found to be in the range of 16.8-64.1 cm2/V-s.",

keywords = "indium nitride, silicon nitride",

author = "Sheng Chen and Chen, {Wei Chun} and Cheng, {Chin Pao}",

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N2 - InN epi-films were grown on nitrided silicon nitride (Si3N4) layer/Si(111) substrate by radio-frequency plasma-assisted metal-organic molecular beam epitaxy (RF-MOMBE). We have investigated the effect of nitrided Si3N4 layer on the structural, optical and electrical properties of the InN films with different nitridation time. The thickness of the single crystalline β-Si3N4 layer was confirmed with index of refraction by Ellipsometer. When the nitridation time at 60 min, the Si3N4 layer was nearly to stoichiometry. Also, thickness of Si3N4 was measured around 7.23 nm. The X-ray diffraction (XRD) pattern shows a wurtzite InN structure with oriented (0001). Phi-scan XD shows the InN films grew epitaxially on the Si(111) substrates. The mobility of InN layer was determined by Hall effect analyzer and found to be in the range of 16.8-64.1 cm2/V-s.

AB - InN epi-films were grown on nitrided silicon nitride (Si3N4) layer/Si(111) substrate by radio-frequency plasma-assisted metal-organic molecular beam epitaxy (RF-MOMBE). We have investigated the effect of nitrided Si3N4 layer on the structural, optical and electrical properties of the InN films with different nitridation time. The thickness of the single crystalline β-Si3N4 layer was confirmed with index of refraction by Ellipsometer. When the nitridation time at 60 min, the Si3N4 layer was nearly to stoichiometry. Also, thickness of Si3N4 was measured around 7.23 nm. The X-ray diffraction (XRD) pattern shows a wurtzite InN structure with oriented (0001). Phi-scan XD shows the InN films grew epitaxially on the Si(111) substrates. The mobility of InN layer was determined by Hall effect analyzer and found to be in the range of 16.8-64.1 cm2/V-s.

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