Growth and characterization of InN epi-films on nitrided Si3N4 layer by RF-MOMBE

Sheng Chen, Wei Chun Chen*, Chin Pao Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


InN epi-films were grown on nitrided silicon nitride (Si3N4) layer/Si(111) substrate by radio-frequency plasma-assisted metal-organic molecular beam epitaxy (RF-MOMBE). We have investigated the effect of nitrided Si3N4 layer on the structural, optical and electrical properties of the InN films with different nitridation time. The thickness of the single crystalline β-Si3N4 layer was confirmed with index of refraction by Ellipsometer. When the nitridation time at 60 min, the Si3N4 layer was nearly to stoichiometry. Also, thickness of Si3N4 was measured around 7.23 nm. The X-ray diffraction (XRD) pattern shows a wurtzite InN structure with oriented (0001). Phi-scan XD shows the InN films grew epitaxially on the Si(111) substrates. The mobility of InN layer was determined by Hall effect analyzer and found to be in the range of 16.8-64.1 cm2/V-s.

Original languageEnglish
Title of host publication2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100807
Publication statusPublished - 2019 May
Event2019 Compound Semiconductor Week, CSW 2019 - Nara, Japan
Duration: 2019 May 192019 May 23

Publication series

Name2019 Compound Semiconductor Week, CSW 2019 - Proceedings


Conference2019 Compound Semiconductor Week, CSW 2019


  • indium nitride
  • silicon nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics


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