Growth and characterization of gallium nitride nanowires produced on different sol-gel derived catalyst dispersed in titania and polyvinyl alcohol matrix

A. Chatterjee, S. Chattopadhyay, C. W. Hsu, C. H. Shen, L. C. Chen, Chia Chun Chen, K. H. Chen, H. Y. Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Sol-gel derived catalyst systems of cobalt, nickel, and iron were used in the growth of gallium nitride (GaN) nanowires by thermal chemical vapor deposition. A diffusion barrier matrix of titania (TiO2 has been used in which the catalysts were dispersed to have control of the catalyst particle sizes and hence on the size and morphology of the GaN nanowires. This single-step and cost-effective processing of the catalyst bed produced good-quality GaN naowires with comparable structural and optical properties with those previously reported. In a particular case, a stress-induced cubic admixture to the otherwise hexagonal structural symmetry was observed. The samples were characterized by high-resolution scanning electron microscopy, x-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, and cathodoluminescence studies.

Original languageEnglish
Pages (from-to)1768-1774
Number of pages7
JournalJournal of Materials Research
Volume19
Issue number6
DOIs
Publication statusPublished - 2004 Jun 1

Fingerprint

Polyvinyl Alcohol
Gallium nitride
polyvinyl alcohol
gallium nitrides
Polyvinyl alcohols
Nanowires
Sol-gels
alcohols
nanowires
titanium
Titanium
gels
catalysts
Catalysts
matrices
Cathodoluminescence
Diffusion barriers
High resolution electron microscopy
Cobalt
cathodoluminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Growth and characterization of gallium nitride nanowires produced on different sol-gel derived catalyst dispersed in titania and polyvinyl alcohol matrix. / Chatterjee, A.; Chattopadhyay, S.; Hsu, C. W.; Shen, C. H.; Chen, L. C.; Chen, Chia Chun; Chen, K. H.; Lee, H. Y.

In: Journal of Materials Research, Vol. 19, No. 6, 01.06.2004, p. 1768-1774.

Research output: Contribution to journalArticle

Chatterjee, A. ; Chattopadhyay, S. ; Hsu, C. W. ; Shen, C. H. ; Chen, L. C. ; Chen, Chia Chun ; Chen, K. H. ; Lee, H. Y. / Growth and characterization of gallium nitride nanowires produced on different sol-gel derived catalyst dispersed in titania and polyvinyl alcohol matrix. In: Journal of Materials Research. 2004 ; Vol. 19, No. 6. pp. 1768-1774.
@article{7d316c5461d046db9cc2122bd414d081,
title = "Growth and characterization of gallium nitride nanowires produced on different sol-gel derived catalyst dispersed in titania and polyvinyl alcohol matrix",
abstract = "Sol-gel derived catalyst systems of cobalt, nickel, and iron were used in the growth of gallium nitride (GaN) nanowires by thermal chemical vapor deposition. A diffusion barrier matrix of titania (TiO2 has been used in which the catalysts were dispersed to have control of the catalyst particle sizes and hence on the size and morphology of the GaN nanowires. This single-step and cost-effective processing of the catalyst bed produced good-quality GaN naowires with comparable structural and optical properties with those previously reported. In a particular case, a stress-induced cubic admixture to the otherwise hexagonal structural symmetry was observed. The samples were characterized by high-resolution scanning electron microscopy, x-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, and cathodoluminescence studies.",
author = "A. Chatterjee and S. Chattopadhyay and Hsu, {C. W.} and Shen, {C. H.} and Chen, {L. C.} and Chen, {Chia Chun} and Chen, {K. H.} and Lee, {H. Y.}",
year = "2004",
month = "6",
day = "1",
doi = "10.1557/JMR.2004.0220",
language = "English",
volume = "19",
pages = "1768--1774",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "6",

}

TY - JOUR

T1 - Growth and characterization of gallium nitride nanowires produced on different sol-gel derived catalyst dispersed in titania and polyvinyl alcohol matrix

AU - Chatterjee, A.

AU - Chattopadhyay, S.

AU - Hsu, C. W.

AU - Shen, C. H.

AU - Chen, L. C.

AU - Chen, Chia Chun

AU - Chen, K. H.

AU - Lee, H. Y.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - Sol-gel derived catalyst systems of cobalt, nickel, and iron were used in the growth of gallium nitride (GaN) nanowires by thermal chemical vapor deposition. A diffusion barrier matrix of titania (TiO2 has been used in which the catalysts were dispersed to have control of the catalyst particle sizes and hence on the size and morphology of the GaN nanowires. This single-step and cost-effective processing of the catalyst bed produced good-quality GaN naowires with comparable structural and optical properties with those previously reported. In a particular case, a stress-induced cubic admixture to the otherwise hexagonal structural symmetry was observed. The samples were characterized by high-resolution scanning electron microscopy, x-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, and cathodoluminescence studies.

AB - Sol-gel derived catalyst systems of cobalt, nickel, and iron were used in the growth of gallium nitride (GaN) nanowires by thermal chemical vapor deposition. A diffusion barrier matrix of titania (TiO2 has been used in which the catalysts were dispersed to have control of the catalyst particle sizes and hence on the size and morphology of the GaN nanowires. This single-step and cost-effective processing of the catalyst bed produced good-quality GaN naowires with comparable structural and optical properties with those previously reported. In a particular case, a stress-induced cubic admixture to the otherwise hexagonal structural symmetry was observed. The samples were characterized by high-resolution scanning electron microscopy, x-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, and cathodoluminescence studies.

UR - http://www.scopus.com/inward/record.url?scp=3142718485&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142718485&partnerID=8YFLogxK

U2 - 10.1557/JMR.2004.0220

DO - 10.1557/JMR.2004.0220

M3 - Article

AN - SCOPUS:3142718485

VL - 19

SP - 1768

EP - 1774

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 6

ER -