TY - JOUR
T1 - Green fluorescence of Mn-doped Zn2SiO4 thin film enhanced by surface plasmon of nano-silver coating
AU - Peng, Kun Cheng
AU - Lin, Yi Chung
AU - Liu, Shiu Jen
AU - Hsieh, Keng Lin
AU - Tseng, Chiun An
AU - Lin, Jing Chie
PY - 2013/1
Y1 - 2013/1
N2 - One thin film of Mn-doped ZnO was deposited on a quartz glass in a sputtering system where RF magnetron and DC were employed as power sources. The specimen was removed and annealed in an atmospheric furnace at 1200 °C for 2 h. This annealed specimen was identified as Mndoped Zn2SiO 4 (MZS) crystal. The sample was sputtered to coat it with one Ag film varying in thickness (i.e., 3, 5, and 10 nm), and subjected to rapid thermal annealing (RTA) at 500 °C for 15 min. The post-RTA-treated specimens were denoted as 3 Ag(MZS)R, 5 Ag(MZS)R, and 10 Ag(MZS)R, and their surfaces revealed a homogenous distribution of silver nanoparticles. Photoluminescence (PL) measurement showed a fluorescence of 530nm (green light) emitted from MZS. A coating of Ag particles on MZS tended to increase the PL intensity in the following order: 10 Ag(MZS)R (29%) < 5 Ag(MZS)R (72%) < 3 Ag(MZS)R (100%).
AB - One thin film of Mn-doped ZnO was deposited on a quartz glass in a sputtering system where RF magnetron and DC were employed as power sources. The specimen was removed and annealed in an atmospheric furnace at 1200 °C for 2 h. This annealed specimen was identified as Mndoped Zn2SiO 4 (MZS) crystal. The sample was sputtered to coat it with one Ag film varying in thickness (i.e., 3, 5, and 10 nm), and subjected to rapid thermal annealing (RTA) at 500 °C for 15 min. The post-RTA-treated specimens were denoted as 3 Ag(MZS)R, 5 Ag(MZS)R, and 10 Ag(MZS)R, and their surfaces revealed a homogenous distribution of silver nanoparticles. Photoluminescence (PL) measurement showed a fluorescence of 530nm (green light) emitted from MZS. A coating of Ag particles on MZS tended to increase the PL intensity in the following order: 10 Ag(MZS)R (29%) < 5 Ag(MZS)R (72%) < 3 Ag(MZS)R (100%).
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U2 - 10.7567/JJAP.52.01AC02
DO - 10.7567/JJAP.52.01AC02
M3 - Article
AN - SCOPUS:84872839522
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1 PART2
M1 - 01AC02
ER -