Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)

M. H. Lee, M. H. Liao, C. W. Tai, S. T. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cells with mechanical bending are studied in this work. The degradation due to the strain can be indeed suppressed with wafer absorber thinning down under mechanical bending and leads Voc, Jsc, F.F. and η exhibiting excellent mechanical reliability. The advantage of wafer thinning down for HIT is not only decreasing electron-hole recombination, but also improving the mechanical reliability of solar cells.

Original languageEnglish
Title of host publicationFTC 2016 - Proceedings of Future Technologies Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1327-1330
Number of pages4
ISBN (Electronic)9781509041718
DOIs
Publication statusPublished - 2017 Jan 17
Event2016 Future Technologies Conference, FTC 2016 - San Francisco, United States
Duration: 2016 Dec 62016 Dec 7

Publication series

NameFTC 2016 - Proceedings of Future Technologies Conference

Other

Other2016 Future Technologies Conference, FTC 2016
CountryUnited States
CitySan Francisco
Period16/12/616/12/7

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Keywords

  • HIT
  • absorber
  • bandgap
  • mechanical stress

ASJC Scopus subject areas

  • Media Technology
  • Computer Networks and Communications
  • Computer Vision and Pattern Recognition
  • Education
  • Artificial Intelligence
  • Computer Science Applications
  • Hardware and Architecture
  • Information Systems

Cite this

Lee, M. H., Liao, M. H., Tai, C. W., & Chang, S. T. (2017). Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design). In FTC 2016 - Proceedings of Future Technologies Conference (pp. 1327-1330). [7821775] (FTC 2016 - Proceedings of Future Technologies Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/FTC.2016.7821775