Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)

M. H. Lee, M. H. Liao, C. W. Tai, S. T. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cells with mechanical bending are studied in this work. The degradation due to the strain can be indeed suppressed with wafer absorber thinning down under mechanical bending and leads Voc, Jsc, F.F. and η exhibiting excellent mechanical reliability. The advantage of wafer thinning down for HIT is not only decreasing electron-hole recombination, but also improving the mechanical reliability of solar cells.

Original languageEnglish
Title of host publicationFTC 2016 - Proceedings of Future Technologies Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1327-1330
Number of pages4
ISBN (Electronic)9781509041718
DOIs
Publication statusPublished - 2017 Jan 17
Event2016 Future Technologies Conference, FTC 2016 - San Francisco, United States
Duration: 2016 Dec 62016 Dec 7

Publication series

NameFTC 2016 - Proceedings of Future Technologies Conference

Other

Other2016 Future Technologies Conference, FTC 2016
CountryUnited States
CitySan Francisco
Period16/12/616/12/7

Fingerprint

CAD
Heterojunctions
Computer aided design
Solar cells
energy
Degradation
Electrons

Keywords

  • HIT
  • absorber
  • bandgap
  • mechanical stress

ASJC Scopus subject areas

  • Media Technology
  • Computer Networks and Communications
  • Computer Vision and Pattern Recognition
  • Education
  • Artificial Intelligence
  • Computer Science Applications
  • Hardware and Architecture
  • Information Systems

Cite this

Lee, M. H., Liao, M. H., Tai, C. W., & Chang, S. T. (2017). Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design). In FTC 2016 - Proceedings of Future Technologies Conference (pp. 1327-1330). [7821775] (FTC 2016 - Proceedings of Future Technologies Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/FTC.2016.7821775

Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design). / Lee, M. H.; Liao, M. H.; Tai, C. W.; Chang, S. T.

FTC 2016 - Proceedings of Future Technologies Conference. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1327-1330 7821775 (FTC 2016 - Proceedings of Future Technologies Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, MH, Liao, MH, Tai, CW & Chang, ST 2017, Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design). in FTC 2016 - Proceedings of Future Technologies Conference., 7821775, FTC 2016 - Proceedings of Future Technologies Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1327-1330, 2016 Future Technologies Conference, FTC 2016, San Francisco, United States, 16/12/6. https://doi.org/10.1109/FTC.2016.7821775
Lee MH, Liao MH, Tai CW, Chang ST. Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design). In FTC 2016 - Proceedings of Future Technologies Conference. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1327-1330. 7821775. (FTC 2016 - Proceedings of Future Technologies Conference). https://doi.org/10.1109/FTC.2016.7821775
Lee, M. H. ; Liao, M. H. ; Tai, C. W. ; Chang, S. T. / Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design). FTC 2016 - Proceedings of Future Technologies Conference. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1327-1330 (FTC 2016 - Proceedings of Future Technologies Conference).
@inproceedings{67d3bfb9adea4e349a5e1db1acc32b71,
title = "Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)",
abstract = "The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cells with mechanical bending are studied in this work. The degradation due to the strain can be indeed suppressed with wafer absorber thinning down under mechanical bending and leads Voc, Jsc, F.F. and η exhibiting excellent mechanical reliability. The advantage of wafer thinning down for HIT is not only decreasing electron-hole recombination, but also improving the mechanical reliability of solar cells.",
keywords = "HIT, absorber, bandgap, mechanical stress",
author = "Lee, {M. H.} and Liao, {M. H.} and Tai, {C. W.} and Chang, {S. T.}",
year = "2017",
month = "1",
day = "17",
doi = "10.1109/FTC.2016.7821775",
language = "English",
series = "FTC 2016 - Proceedings of Future Technologies Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1327--1330",
booktitle = "FTC 2016 - Proceedings of Future Technologies Conference",

}

TY - GEN

T1 - Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design)

AU - Lee, M. H.

AU - Liao, M. H.

AU - Tai, C. W.

AU - Chang, S. T.

PY - 2017/1/17

Y1 - 2017/1/17

N2 - The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cells with mechanical bending are studied in this work. The degradation due to the strain can be indeed suppressed with wafer absorber thinning down under mechanical bending and leads Voc, Jsc, F.F. and η exhibiting excellent mechanical reliability. The advantage of wafer thinning down for HIT is not only decreasing electron-hole recombination, but also improving the mechanical reliability of solar cells.

AB - The strain distribution and electrical characteristics of heterojunction with intrinsic thin layer (HIT) solar cells with mechanical bending are studied in this work. The degradation due to the strain can be indeed suppressed with wafer absorber thinning down under mechanical bending and leads Voc, Jsc, F.F. and η exhibiting excellent mechanical reliability. The advantage of wafer thinning down for HIT is not only decreasing electron-hole recombination, but also improving the mechanical reliability of solar cells.

KW - HIT

KW - absorber

KW - bandgap

KW - mechanical stress

UR - http://www.scopus.com/inward/record.url?scp=85013644568&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85013644568&partnerID=8YFLogxK

U2 - 10.1109/FTC.2016.7821775

DO - 10.1109/FTC.2016.7821775

M3 - Conference contribution

AN - SCOPUS:85013644568

T3 - FTC 2016 - Proceedings of Future Technologies Conference

SP - 1327

EP - 1330

BT - FTC 2016 - Proceedings of Future Technologies Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -